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Crystals 2017, 7(3), 74; doi:10.3390/cryst7030074

Numerical Study of the Thermal and Flow Fields during the Growth Process of 800 kg and 1600 kg Silicon Feedstock

1
Department of Mechanical Engineering, National Central University, Jhongli 320, Taiwan
2
Research and Development Division, GlobalWafers Co., Ltd., Hsinchu 300, Taiwan
3
Sino-American Silicon Products Inc., Zhunan 350, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Bing Gao
Received: 31 October 2016 / Accepted: 1 March 2017 / Published: 3 March 2017
(This article belongs to the Special Issue Global Modeling in Crystal Growth)
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Abstract

Two-dimensional (2D) transient numerical simulations are performed to investigate the evolution of the thermal and flow fields during the growth of multi-crystalline silicon ingots with two different silicon feedstock capacities, 800 kg and 1600 kg. The simulation results show that there are differences in the structure of the melt flow. In the 1600 kg case, there is a reduction in the concavity of the crystal-melt interface near the crucible wall and an increase in the convexity of the interface at higher solidification fractions. Moreover, the Voronkov ratios, which are indicative of the formation of defects, become lower during the solidification process. View Full-Text
Keywords: multi-crystalline silicon; directional solidification; solar cells multi-crystalline silicon; directional solidification; solar cells
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Nguyen, T.H.T.; Chen, J.C.; Hu, C.; Chen, C.H.; Huang, Y.H.; Lin, H.W.; Yu, A.; Hsu, B.; Yang, M.; Yang, R. Numerical Study of the Thermal and Flow Fields during the Growth Process of 800 kg and 1600 kg Silicon Feedstock. Crystals 2017, 7, 74.

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