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Crystals 2017, 7(1), 26; doi:10.3390/cryst7010026

Numerical Modelling of the Czochralski Growth of β-Ga2O3

1
Leibniz Institute for Crystal Growth (IKZ), Max-Born-Str. 2, 12489 Berlin, Germany
2
Institute for Geology, Mineralogy and Geophysics, Ruhr University Bochum, 44801 Bochum, Germany
*
Author to whom correspondence should be addressed.
Academic Editor: Bing Gao
Received: 25 November 2016 / Revised: 3 January 2017 / Accepted: 6 January 2017 / Published: 17 January 2017
(This article belongs to the Special Issue Global Modeling in Crystal Growth)
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Abstract

Our numerical modelling of the Czochralski growth of single crystalline β-Ga 2 O 3 crystals (monoclinic symmetry) starts at the 2D heat transport analysis within the crystal growth furnace, proceeds with the 3D heat transport and fluid flow analysis in the crystal-melt-crucible arrangement and targets the 3D thermal stress analysis within the β-Ga 2 O 3 crystal. In order to perform the stress analysis, we measured the thermal expansion coefficients and the elastic stiffness coefficients in two samples of a β-Ga 2 O 3 crystal grown at IKZ. Additionally, we analyse published data of β-Ga 2 O 3 material properties and use data from literature for comparative calculations. The computations were performed by the software packages CrysMAS, CGsim, Ansys-cfx and comsol Multiphysics. By the hand of two different thermal expansion data sets and two different crystal orientations, we analyse the elastic stresses in terms of the von-Mises stress. View Full-Text
Keywords: global simulation; Ga2O3; thermal stress global simulation; Ga2O3; thermal stress
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Miller, W.; Böttcher, K.; Galazka, Z.; Schreuer, J. Numerical Modelling of the Czochralski Growth of β-Ga2O3. Crystals 2017, 7, 26.

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