Numerical Modelling of the Czochralski Growth of β-Ga2O3
Leibniz Institute for Crystal Growth (IKZ), Max-Born-Str. 2, 12489 Berlin, Germany
Institute for Geology, Mineralogy and Geophysics, Ruhr University Bochum, 44801 Bochum, Germany
Author to whom correspondence should be addressed.
Academic Editor: Bing Gao
Received: 25 November 2016 / Revised: 3 January 2017 / Accepted: 6 January 2017 / Published: 17 January 2017
Our numerical modelling of the Czochralski growth of single crystalline β
crystals (monoclinic symmetry) starts at the 2D heat transport analysis within the crystal growth furnace, proceeds with the 3D heat transport and fluid flow analysis in the crystal-melt-crucible arrangement and targets the 3D thermal stress analysis within the β
crystal. In order to perform the stress analysis, we measured the thermal expansion coefficients and the elastic stiffness coefficients in two samples of a β
crystal grown at IKZ. Additionally, we analyse published data of β
material properties and use data from literature for comparative calculations. The computations were performed by the software packages CrysMAS, CGsim, Ansys-cfx and comsol Multiphysics. By the hand of two different thermal expansion data sets and two different crystal orientations, we analyse the elastic stresses in terms of the von-Mises stress.
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MDPI and ACS Style
Miller, W.; Böttcher, K.; Galazka, Z.; Schreuer, J. Numerical Modelling of the Czochralski Growth of β-Ga2O3. Crystals 2017, 7, 26.
Miller W, Böttcher K, Galazka Z, Schreuer J. Numerical Modelling of the Czochralski Growth of β-Ga2O3. Crystals. 2017; 7(1):26.
Miller, Wolfram; Böttcher, Klaus; Galazka, Zbigniew; Schreuer, Jürgen. 2017. "Numerical Modelling of the Czochralski Growth of β-Ga2O3." Crystals 7, no. 1: 26.
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