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Crystals 2017, 7(3), 63; doi:10.3390/cryst7030063

Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application

1
Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Chang Ning Road, Shanghai 200050, China
2
Beijing University of Posts and Telecommunications, Xitucheng Road, Haidian District, Beijing 100089, China
3
Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
4
Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg 458 93 58-34, Sweden
*
Authors to whom correspondence should be addressed.
Academic Editor: Paul J. Simmonds
Received: 1 December 2016 / Revised: 2 February 2017 / Accepted: 15 February 2017 / Published: 24 February 2017
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Abstract

Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications. View Full-Text
Keywords: dilute bismide; III-N-Bi; III-P-Bi; III-As-Bi; III-Sb-Bi; MBE; MOCVD; surfactant; droplet; bandgap reduction; GaAsBi lasers; In(Ga)AsBi detectors; InSbBi detectors dilute bismide; III-N-Bi; III-P-Bi; III-As-Bi; III-Sb-Bi; MBE; MOCVD; surfactant; droplet; bandgap reduction; GaAsBi lasers; In(Ga)AsBi detectors; InSbBi detectors
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Wang, L.; Zhang, L.; Yue, L.; Liang, D.; Chen, X.; Li, Y.; Lu, P.; Shao, J.; Wang, S. Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application. Crystals 2017, 7, 63.

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