Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys
AbstractGe and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx) offers a particularly interesting prospect. By using a precursor gas with a Ge4C core, C can be preferentially incorporated in substitutional sites, suppressing interstitial and C cluster defects. We present a method of reproducible and upscalable gas synthesis of tetrakis(germyl)methane, or (H3Ge)4C, followed by the design of a hybrid gas/solid-source molecular beam epitaxy system and subsequent growth of defect-free Ge1−xCx by molecular beam epitaxy (MBE). Secondary ion mass spectroscopy, transmission electron microscopy and contactless electroreflectance confirm the presence of carbon with very high crystal quality resulting in a decrease in the direct bandgap energy. This technique has broad applicability to growth of highly mismatched alloys by MBE. View Full-Text
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Stephenson, C.A.; Gillett-Kunnath, M.; O’Brien, W.A.; Kudrawiec, R.; Wistey, M.A. Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys. Crystals 2016, 6, 159.
Stephenson CA, Gillett-Kunnath M, O’Brien WA, Kudrawiec R, Wistey MA. Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys. Crystals. 2016; 6(12):159.Chicago/Turabian Style
Stephenson, Chad A.; Gillett-Kunnath, Miriam; O’Brien, William A.; Kudrawiec, Robert; Wistey, Mark A. 2016. "Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys." Crystals 6, no. 12: 159.
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