Next Article in Journal
Microstructure Evolution and Thermoelectric Property of Pt-PtRh Thin Film Thermocouples
Next Article in Special Issue
Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy
Previous Article in Journal
Synthesis, Characterization and Catalytic Performance of Well-Ordered Crystalline Heteroatom Mesoporous MCM-41
Previous Article in Special Issue
Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application
Article Menu
Issue 4 (April) cover image

Export Article

Open AccessLetter
Crystals 2017, 7(4), 94; doi:10.3390/cryst7040094

Formation of GaAs/GaSb Core-Shell Heterostructured Nanowires Grown by Molecular-Beam Epitaxy

1
School of Materials Science and Engineering, University of Shanghai for Science and Technology, 516 Jun-Gong Road, Shanghai 200093, China
2
National Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Science, 500 Yu-Tian Road, Shanghai 200083, China
3
School of Engineering, The University of Queensland, St. Lucia, QLD 4072, Australia
4
Laboratory of Advanced Materials, Fudan University, Shanghai 200438, China
5
Center for Microscopy and Microanalysis, The University of Queensland, St. Lucia, QLD 4072, Australia
*
Author to whom correspondence should be addressed.
Academic Editor: Paul J. Simmonds
Received: 28 February 2017 / Revised: 21 March 2017 / Accepted: 22 March 2017 / Published: 24 March 2017
View Full-Text   |   Download PDF [4233 KB, uploaded 26 March 2017]   |  

Abstract

In this paper, we demonstrated the growth of GaAs/GaSb core-shell heterostructured nanowires on GaAs substrates, with the assistance of Au catalysts by molecular-beam epitaxy. Time-evolution experiments were designed to study the formation of GaSb shells with different growth times. It was found that, by comparing the morphology of nanowires for various growth times, lateral growth was taking a dominant position since GaSb growth began and bulgy GaSb particles formed on the nanowire tips during the growth. The movement of catalyst Au droplets was witnessed, thus, the radial growth was enhanced by sidewall nucleation under the vapor-solid mechanism due to the lack of driving force for axial growth. Moreover, compositional and structural characteristics of the GaAs/GaSb core-shell heterostructured nanowires were investigated by electron microscopy. Differing from the commonly anticipated result, GaSb shells took a wurzite structure instead of a zinc-blende structure to form the GaAs/GaSb wurzite/wurzite core-shell heterostructured nanowires, which is of interest to the research of band-gap engineering. This study provides a significant insight into the formation of core-shell heterostructured nanowires. View Full-Text
Keywords: GaSb; core-shell heterostructure; diffusion behavior; semiconductor III-V materials; molecular-beam epitaxy (MBE) GaSb; core-shell heterostructure; diffusion behavior; semiconductor III-V materials; molecular-beam epitaxy (MBE)
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Wei, D.-D.; Shi, S.-X.; Zhou, C.; Zhang, X.-T.; Chen, P.-P.; Xie, J.-T.; Tian, F.; Zou, J. Formation of GaAs/GaSb Core-Shell Heterostructured Nanowires Grown by Molecular-Beam Epitaxy. Crystals 2017, 7, 94.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Crystals EISSN 2073-4352 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top