Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb
AbstractIII-(As, Sb) alloys are building blocks for various advanced optoelectronic devices, but the growth of their ternary or quaternary materials are commonly limited by spontaneous formation of clusters and phase separations during alloying. Recently, digital alloy growth by molecular beam epitaxy has been widely adopted in preference to conventional random alloy growth because of the extra degree of control offered by the ordered alloying. In this article, we provide a comparative study of the optical characteristics of AlAsSb alloys grown lattice-matched to GaSb using both techniques. The sample grown by digital alloy technique showed stronger photoluminescence intensity, narrower peak linewidth, and larger carrier activation energy than the random alloy technique, indicating an improved optical quality with lower density of non-radiative recombination centers. In addition, a relatively long carrier lifetime was observed from the digital alloy sample, consistent with the results obtained from the photoluminescence study. View Full-Text
Share & Cite This Article
Juang, B.-C.; Liang, B.; Ren, D.; Prout, D.L.; Chatziioannou, A.F.; Huffaker, D.L. Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb. Crystals 2017, 7, 313.
Juang B-C, Liang B, Ren D, Prout DL, Chatziioannou AF, Huffaker DL. Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb. Crystals. 2017; 7(10):313.Chicago/Turabian Style
Juang, Bor-Chau; Liang, Baolai; Ren, Dingkun; Prout, David L.; Chatziioannou, Arion F.; Huffaker, Diana L. 2017. "Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb." Crystals 7, no. 10: 313.
Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.