Next Article in Journal
Calcium Sulfate Hemihydrate Whiskers Obtained from Flue Gas Desulfurization Gypsum and Used for the Adsorption Removal of Lead
Next Article in Special Issue
Optical Characterization of AlAsSb Digital Alloy and Random Alloy on GaSb
Previous Article in Journal
Tri- and Mono-Nuclear Zinc(II) Complexes Based on Half- and Mono-Salamo Chelating Ligands
Previous Article in Special Issue
Formation of GaAs/GaSb Core-Shell Heterostructured Nanowires Grown by Molecular-Beam Epitaxy
Article Menu
Issue 9 (September) cover image

Export Article

Open AccessReview
Crystals 2017, 7(9), 268; doi:10.3390/cryst7090268

Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy

1
National Research Council Canada, 1200 Montreal Road, Ottawa K1A 0R6, ON, Canada
2
Department of Electrical Engineering and Computer Science, Center for Photonics and Multiscale Nanomaterials, University of Michigan, 1301 Beal Ave, Ann Arbor, MI 48109, USA
3
Department of Electrical and Computer Engineering, McGill University, 3480 University Street, Montreal H3A 0E9, QC, Canada
*
Author to whom correspondence should be addressed.
Academic Editor: Paul J. Simmonds
Received: 18 August 2017 / Revised: 30 August 2017 / Accepted: 30 August 2017 / Published: 1 September 2017
View Full-Text   |   Download PDF [7512 KB, uploaded 1 September 2017]   |  

Abstract

p-Type doping represents a key step towards III-nitride (InN, GaN, AlN) optoelectronic devices. In the past, tremendous efforts have been devoted to obtaining high quality p-type III-nitrides, and extraordinary progress has been made in both materials and device aspects. In this article, we intend to discuss a small portion of these processes, focusing on the molecular beam epitaxy (MBE)-grown p-type InN and AlN—two bottleneck material systems that limit the development of III-nitride near-infrared and deep ultraviolet (UV) optoelectronic devices. We will show that by using MBE-grown nanowire structures, the long-lasting p-type doping challenges of InN and AlN can be largely addressed. New aspects of MBE growth of III-nitride nanostructures are also discussed. View Full-Text
Keywords: molecular beam epitaxy; nanowire; p-type; GaN; InN; AlN; laser; LED molecular beam epitaxy; nanowire; p-type; GaN; InN; AlN; laser; LED
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Zhao, S.; Mi, Z. Recent Advances on p-Type III-Nitride Nanowires by Molecular Beam Epitaxy. Crystals 2017, 7, 268.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Crystals EISSN 2073-4352 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top