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Crystals 2016, 6(7), 77; doi:10.3390/cryst6070077

Dislocation Nucleation on Grain Boundaries: Low Angle Twist and Asymmetric Tilt Boundaries

1
National Center for Supercomputing Applications, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
2
School of Mechanical and Materials Engineering, Washington State University, Pullman, WA 99164, USA
*
Author to whom correspondence should be addressed.
Academic Editor: Ronald Armstrong
Received: 22 May 2016 / Revised: 21 June 2016 / Accepted: 1 July 2016 / Published: 5 July 2016
(This article belongs to the Special Issue Crystal Dislocations)
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Abstract

We investigate the mechanisms of incipient plasticity at low angle twist and asymmetric tilt boundaries in fcc metals. To observe plasticity of grain boundaries independently of the bulk plasticity, we simulate nanoindentation of bicrystals. On the low angle twist boundaries, the intrinsic grain boundary (GB) dislocation network deforms under load until a dislocation segment compatible with glide on a lattice slip plane is created. The half loops are then emitted into the bulk of the crystal. Asymmetric twist boundaries considered here did not produce bulk dislocations under load. Instead, the boundary with a low excess volume nucleated a mobile GB dislocation and additional GB defects. The GB sliding proceeded by motion of the mobile GB dislocation. The boundary with a high excess volume sheared elastically, while bulk-nucleated dislocations produced plastic relaxation. View Full-Text
Keywords: intrinsic dislocations; partial dislocations; molecular dynamics; nanoindentation intrinsic dislocations; partial dislocations; molecular dynamics; nanoindentation
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Guleryuz, E.; Mesarovic, S.D. Dislocation Nucleation on Grain Boundaries: Low Angle Twist and Asymmetric Tilt Boundaries. Crystals 2016, 6, 77.

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