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Crystals 2016, 6(7), 74; doi:10.3390/cryst6070074

Electronic and Optical Properties of Dislocations in Silicon

1,†,* and 2,†
1
Max Planck Institute of Microstructure Physics, Halle 06130, Germany
2
Department of Circuit Design, Brandenburg University of Technology Cottbus-Senftenberg, Cottbus 03046, Germany
These authors contributed equally to this work.
*
Author to whom correspondence should be addressed.
Academic Editor: Ronald W. Armstrong
Received: 10 May 2016 / Revised: 22 June 2016 / Accepted: 24 June 2016 / Published: 30 June 2016
(This article belongs to the Special Issue Crystal Dislocations)

Abstract

Dislocations exhibit a number of exceptional electronic properties resulting in a significant increase of the drain current of metal-oxide-semiconductor field-effect transistors (MOSFETs) if defined numbers of these defects are placed in the channel. Measurements on individual dislocations in Si refer to a supermetallic conductivity. A model of the electronic structure of dislocations is proposed based on experimental measurements and tight binding simulations. It is shown that the high strain level on the dislocation core—exceeding 10% or more—causes locally dramatic changes of the band structure and results in the formation of a quantum well along the dislocation line. This explains experimental findings (two-dimensional electron gas and single-electron transitions). The energy quantization within the quantum well is most important for supermetallic conductivity. View Full-Text
Keywords: silicon; dislocation; electronic properties; carrier confinement; strain silicon; dislocation; electronic properties; carrier confinement; strain
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Reiche, M.; Kittler, M. Electronic and Optical Properties of Dislocations in Silicon. Crystals 2016, 6, 74.

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