Electronic and Optical Properties of Dislocations in Silicon
AbstractDislocations exhibit a number of exceptional electronic properties resulting in a significant increase of the drain current of metal-oxide-semiconductor field-effect transistors (MOSFETs) if defined numbers of these defects are placed in the channel. Measurements on individual dislocations in Si refer to a supermetallic conductivity. A model of the electronic structure of dislocations is proposed based on experimental measurements and tight binding simulations. It is shown that the high strain level on the dislocation core—exceeding 10% or more—causes locally dramatic changes of the band structure and results in the formation of a quantum well along the dislocation line. This explains experimental findings (two-dimensional electron gas and single-electron transitions). The energy quantization within the quantum well is most important for supermetallic conductivity. View Full-Text
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Reiche, M.; Kittler, M. Electronic and Optical Properties of Dislocations in Silicon. Crystals 2016, 6, 74.
Reiche M, Kittler M. Electronic and Optical Properties of Dislocations in Silicon. Crystals. 2016; 6(7):74.Chicago/Turabian Style
Reiche, Manfred; Kittler, Martin. 2016. "Electronic and Optical Properties of Dislocations in Silicon." Crystals 6, no. 7: 74.
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