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Crystals 2013, 3(1), 79-111; doi:10.3390/cryst3010079
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Metals on Graphene: Interactions, Growth Morphology, and Thermal Stability

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Received: 30 November 2012; in revised form: 14 January 2013 / Accepted: 24 January 2013 / Published: 31 January 2013
(This article belongs to the Special Issue Graphenes)
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Abstract: Graphene, a single atomic layer of graphite, has been a material of recent intensive studies due to its novel electronic and structural properties and its potential applications in the emerging area of carbon-based electronic devices. Metal on graphene growth is one of the current research interests, aiming at improving and manipulating the electronic and magnetic properties of graphene through metal atom adsorption or doping to meet various requirements in device applications. In this paper, we will give an overview of recent experimental and computational investigation of interaction, growth morphology, and thermal stability of various metals on graphene grown on 6H-SiC(0001) substrate.
Keywords: metal on graphene; adsorption; scanning tunneling microscopy; interaction; growth morphology; thermal stability metal on graphene; adsorption; scanning tunneling microscopy; interaction; growth morphology; thermal stability
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Liu, X.; Wang, C.-Z.; Hupalo, M.; Lin, H.-Q.; Ho, K.-M.; Tringides, M.C. Metals on Graphene: Interactions, Growth Morphology, and Thermal Stability. Crystals 2013, 3, 79-111.

AMA Style

Liu X, Wang C-Z, Hupalo M, Lin H-Q, Ho K-M, Tringides MC. Metals on Graphene: Interactions, Growth Morphology, and Thermal Stability. Crystals. 2013; 3(1):79-111.

Chicago/Turabian Style

Liu, Xiaojie; Wang, Cai-Zhuang; Hupalo, Myron; Lin, Hai-Qing; Ho, Kai-Ming; Tringides, Michael C. 2013. "Metals on Graphene: Interactions, Growth Morphology, and Thermal Stability." Crystals 3, no. 1: 79-111.


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