The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene
AbstractIn Raman spectroscopy of graphite and graphene, the D band at ∼ 1355 cm−1 is used as the indication of the dirtiness of a sample. However, our analysis suggests that the physics behind the D band is closely related to a very clear idea for describing a molecule, namely bonding and antibonding orbitals in graphene. In this paper, we review our recent work on the mechanism for activating the D band at a graphene edge.
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Sasaki, K.-I.; Tokura, Y.; Sogawa, T. The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene. Crystals 2013, 3, 120-140.
Sasaki K-I, Tokura Y, Sogawa T. The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene. Crystals. 2013; 3(1):120-140.Chicago/Turabian Style
Sasaki, Ken-ichi; Tokura, Yasuhiro; Sogawa, Tetsuomi. 2013. "The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene." Crystals 3, no. 1: 120-140.