Crystals 2013, 3(1), 120-140; doi:10.3390/cryst3010120
Article

The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene

1 NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan 2 Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
* Author to whom correspondence should be addressed.
Received: 19 November 2012; in revised form: 7 January 2013 / Accepted: 1 February 2013 / Published: 22 February 2013
(This article belongs to the Special Issue Graphenes)
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Abstract: In Raman spectroscopy of graphite and graphene, the D band at ∼ 1355 cm−1 is used as the indication of the dirtiness of a sample. However, our analysis suggests that the physics behind the D band is closely related to a very clear idea for describing a molecule, namely bonding and antibonding orbitals in graphene. In this paper, we review our recent work on the mechanism for activating the D band at a graphene edge.
Keywords: graphene; edge; Raman D band; molecular orbitals

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MDPI and ACS Style

Sasaki, K.-I.; Tokura, Y.; Sogawa, T. The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene. Crystals 2013, 3, 120-140.

AMA Style

Sasaki K-I, Tokura Y, Sogawa T. The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene. Crystals. 2013; 3(1):120-140.

Chicago/Turabian Style

Sasaki, Ken-ichi; Tokura, Yasuhiro; Sogawa, Tetsuomi. 2013. "The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene." Crystals 3, no. 1: 120-140.

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