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Crystals 2013, 3(1), 120-140; doi:10.3390/cryst3010120

The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene

NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
Author to whom correspondence should be addressed.
Received: 19 November 2012 / Revised: 7 January 2013 / Accepted: 1 February 2013 / Published: 22 February 2013
(This article belongs to the Special Issue Graphenes)
View Full-Text   |   Download PDF [737 KB, uploaded 22 February 2013]   |  


In Raman spectroscopy of graphite and graphene, the D band at ∼ 1355 cm−1 is used as the indication of the dirtiness of a sample. However, our analysis suggests that the physics behind the D band is closely related to a very clear idea for describing a molecule, namely bonding and antibonding orbitals in graphene. In this paper, we review our recent work on the mechanism for activating the D band at a graphene edge. View Full-Text
Keywords: graphene; edge; Raman D band; molecular orbitals graphene; edge; Raman D band; molecular orbitals

This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Sasaki, K.-I.; Tokura, Y.; Sogawa, T. The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene. Crystals 2013, 3, 120-140.

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