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Metals on Graphene: Interactions, Growth Morphology, and Thermal Stability
Crystals 2013, 3(1), 120-140; doi:10.3390/cryst3010120

The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene

1,* , 1,2
1 NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan 2 Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
* Author to whom correspondence should be addressed.
Received: 19 November 2012 / Revised: 7 January 2013 / Accepted: 1 February 2013 / Published: 22 February 2013
(This article belongs to the Special Issue Graphenes)
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In Raman spectroscopy of graphite and graphene, the D band at ∼ 1355 cm−1 is used as the indication of the dirtiness of a sample. However, our analysis suggests that the physics behind the D band is closely related to a very clear idea for describing a molecule, namely bonding and antibonding orbitals in graphene. In this paper, we review our recent work on the mechanism for activating the D band at a graphene edge.
Keywords: graphene; edge; Raman D band; molecular orbitals graphene; edge; Raman D band; molecular orbitals
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Sasaki, K.-I.; Tokura, Y.; Sogawa, T. The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene. Crystals 2013, 3, 120-140.

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