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The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene
NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Graduate School of Pure and Applied Sciences, University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
* Author to whom correspondence should be addressed.
Received: 19 November 2012; in revised form: 7 January 2013 / Accepted: 1 February 2013 / Published: 22 February 2013
(This article belongs to the Special Issue Graphenes
Abstract: In Raman spectroscopy of graphite and graphene, the D band at ∼ 1355 cm−1 is used as the indication of the dirtiness of a sample. However, our analysis suggests that the physics behind the D band is closely related to a very clear idea for describing a molecule, namely bonding and antibonding orbitals in graphene. In this paper, we review our recent work on the mechanism for activating the D band at a graphene edge.
Keywords: graphene; edge; Raman D band; molecular orbitals
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MDPI and ACS Style
Sasaki, K.-I.; Tokura, Y.; Sogawa, T. The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene. Crystals 2013, 3, 120-140.
Sasaki K-I, Tokura Y, Sogawa T. The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene. Crystals. 2013; 3(1):120-140.
Sasaki, Ken-ichi; Tokura, Yasuhiro; Sogawa, Tetsuomi. 2013. "The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene." Crystals 3, no. 1: 120-140.