Crystals 2013, 3(1), 120-140; doi:10.3390/cryst3010120
Article

The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene

Received: 19 November 2012; in revised form: 7 January 2013 / Accepted: 1 February 2013 / Published: 22 February 2013
(This article belongs to the Special Issue Graphenes)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: In Raman spectroscopy of graphite and graphene, the D band at ∼ 1355 cm−1 is used as the indication of the dirtiness of a sample. However, our analysis suggests that the physics behind the D band is closely related to a very clear idea for describing a molecule, namely bonding and antibonding orbitals in graphene. In this paper, we review our recent work on the mechanism for activating the D band at a graphene edge.
Keywords: graphene; edge; Raman D band; molecular orbitals
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MDPI and ACS Style

Sasaki, K.-I.; Tokura, Y.; Sogawa, T. The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene. Crystals 2013, 3, 120-140.

AMA Style

Sasaki K-I, Tokura Y, Sogawa T. The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene. Crystals. 2013; 3(1):120-140.

Chicago/Turabian Style

Sasaki, Ken-ichi; Tokura, Yasuhiro; Sogawa, Tetsuomi. 2013. "The Origin of Raman D Band: Bonding and Antibonding Orbitals in Graphene." Crystals 3, no. 1: 120-140.

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