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Effects of Strain on Notched Zigzag Graphene Nanoribbons
AbstractThe combined effects of an asymmetric (square or V-shaped) notch and uniaxial strain are studied in a zigzag graphene nanoribbon (ZGNR) device using a generalized tight-binding model. The spin-polarization and conductance-gap properties, calculated within the Landauer–B¨uttiker formalism, were found to be tunable for uniaxial strain along the ribbon-length and ribbon-width for an ideal ZGNR and square (V-shaped) notched ZGNR systems. Uniaxial strain along the ribbon-width for strains 10% initiated significant notch-dependent reductions to the conduction-gap. For the V-shaped notch, such strains also induced spin-dependent changes that result, at 20% strain, in a semi-conductive state and metallic state for each respective spin-type, thus demonstrating possible quantum mechanisms for spin-filtration.
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Baldwin, J.; Hancock, Y. Effects of Strain on Notched Zigzag Graphene Nanoribbons. Crystals 2013, 3, 38-48.View more citation formats
Baldwin J, Hancock Y. Effects of Strain on Notched Zigzag Graphene Nanoribbons. Crystals. 2013; 3(1):38-48.Chicago/Turabian Style
Baldwin, Jack; Hancock, Y. 2013. "Effects of Strain on Notched Zigzag Graphene Nanoribbons." Crystals 3, no. 1: 38-48.