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Crystals 2013, 3(1), 38-48; doi:10.3390/cryst3010038
Article

Effects of Strain on Notched Zigzag Graphene Nanoribbons

 and *
Received: 19 November 2012; in revised form: 28 December 2012 / Accepted: 9 January 2013 / Published: 23 January 2013
(This article belongs to the Special Issue Graphenes)
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Abstract: The combined effects of an asymmetric (square or V-shaped) notch and uniaxial strain are studied in a zigzag graphene nanoribbon (ZGNR) device using a generalized tight-binding model. The spin-polarization and conductance-gap properties, calculated within the Landauer–B¨uttiker formalism, were found to be tunable for uniaxial strain along the ribbon-length and ribbon-width for an ideal ZGNR and square (V-shaped) notched ZGNR systems. Uniaxial strain along the ribbon-width for strains 10% initiated significant notch-dependent reductions to the conduction-gap. For the V-shaped notch, such strains also induced spin-dependent changes that result, at 20% strain, in a semi-conductive state and metallic state for each respective spin-type, thus demonstrating possible quantum mechanisms for spin-filtration.
Keywords: graphene nanoribbons; Hubbard model; spin-transport; itinerant magnetism; strain effects; nanotechnology graphene nanoribbons; Hubbard model; spin-transport; itinerant magnetism; strain effects; nanotechnology
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Baldwin, J.; Hancock, Y. Effects of Strain on Notched Zigzag Graphene Nanoribbons. Crystals 2013, 3, 38-48.

AMA Style

Baldwin J, Hancock Y. Effects of Strain on Notched Zigzag Graphene Nanoribbons. Crystals. 2013; 3(1):38-48.

Chicago/Turabian Style

Baldwin, Jack; Hancock, Y. 2013. "Effects of Strain on Notched Zigzag Graphene Nanoribbons." Crystals 3, no. 1: 38-48.


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