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Crystals 2013, 3(1), 257-274; doi:10.3390/cryst3010257

A Study on Graphene—Metal Contact

, 2
, 3,4
 and 3,*
Received: 9 January 2013 / Revised: 19 February 2013 / Accepted: 27 February 2013 / Published: 18 March 2013
(This article belongs to the Special Issue Graphenes)
View Full-Text   |   Download PDF [295 KB, uploaded 18 March 2013]   |   Browse Figures
Abstract: The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1) metal preparation method; (2) asymmetric conductance; (3) annealing effect; (4) interfaces impact.
Keywords: graphene; field-effect transistor; contact resistance; Raman graphene; field-effect transistor; contact resistance; Raman
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Liu, W.; Wei, J.; Sun, X.; Yu, H. A Study on Graphene—Metal Contact. Crystals 2013, 3, 257-274.

AMA Style

Liu W, Wei J, Sun X, Yu H. A Study on Graphene—Metal Contact. Crystals. 2013; 3(1):257-274.

Chicago/Turabian Style

Liu, Wenjun; Wei, Jun; Sun, Xiaowei; Yu, Hongyu. 2013. "A Study on Graphene—Metal Contact." Crystals 3, no. 1: 257-274.

Crystals EISSN 2073-4352 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert