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Crystals 2013, 3(1), 257-274; doi:10.3390/cryst3010257
Review

A Study on Graphene—Metal Contact

1
, 2
, 3,4
 and 3,*
Received: 9 January 2013; in revised form: 19 February 2013 / Accepted: 27 February 2013 / Published: 18 March 2013
(This article belongs to the Special Issue Graphenes)
View Full-Text   |   Download PDF [295 KB, uploaded 18 March 2013]
Abstract: The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1) metal preparation method; (2) asymmetric conductance; (3) annealing effect; (4) interfaces impact.
Keywords: graphene; field-effect transistor; contact resistance; Raman graphene; field-effect transistor; contact resistance; Raman
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Liu, W.; Wei, J.; Sun, X.; Yu, H. A Study on Graphene—Metal Contact. Crystals 2013, 3, 257-274.

AMA Style

Liu W, Wei J, Sun X, Yu H. A Study on Graphene—Metal Contact. Crystals. 2013; 3(1):257-274.

Chicago/Turabian Style

Liu, Wenjun; Wei, Jun; Sun, Xiaowei; Yu, Hongyu. 2013. "A Study on Graphene—Metal Contact." Crystals 3, no. 1: 257-274.

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