Crystals 2013, 3(1), 257-274; doi:10.3390/cryst3010257

A Study on Graphene—Metal Contact

1 Department of Materials Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-8656, Japan 2 Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075, Singapore 3 Department of Electronic and Computer Engineering, South University of Science and Technology, Shenzhen, Guangdong 518055, China 4 Division of Microelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
* Author to whom correspondence should be addressed.
Received: 9 January 2013; in revised form: 19 February 2013 / Accepted: 27 February 2013 / Published: 18 March 2013
(This article belongs to the Special Issue Graphenes)
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Abstract: The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1) metal preparation method; (2) asymmetric conductance; (3) annealing effect; (4) interfaces impact.
Keywords: graphene; field-effect transistor; contact resistance; Raman

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MDPI and ACS Style

Liu, W.; Wei, J.; Sun, X.; Yu, H. A Study on Graphene—Metal Contact. Crystals 2013, 3, 257-274.

AMA Style

Liu W, Wei J, Sun X, Yu H. A Study on Graphene—Metal Contact. Crystals. 2013; 3(1):257-274.

Chicago/Turabian Style

Liu, Wenjun; Wei, Jun; Sun, Xiaowei; Yu, Hongyu. 2013. "A Study on Graphene—Metal Contact." Crystals 3, no. 1: 257-274.

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