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Crystals 2013, 3(1), 257-274; doi:10.3390/cryst3010257
Review

A Study on Graphene—Metal Contact

1
, 2
, 3,4
 and 3,*
1 Department of Materials Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-8656, Japan 2 Singapore Institute of Manufacturing Technology, 71 Nanyang Drive, 638075, Singapore 3 Department of Electronic and Computer Engineering, South University of Science and Technology, Shenzhen, Guangdong 518055, China 4 Division of Microelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore
* Author to whom correspondence should be addressed.
Received: 9 January 2013 / Revised: 19 February 2013 / Accepted: 27 February 2013 / Published: 18 March 2013
(This article belongs to the Special Issue Graphenes)
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Abstract

The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1) metal preparation method; (2) asymmetric conductance; (3) annealing effect; (4) interfaces impact.
Keywords: graphene; field-effect transistor; contact resistance; Raman graphene; field-effect transistor; contact resistance; Raman
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Liu, W.; Wei, J.; Sun, X.; Yu, H. A Study on Graphene—Metal Contact. Crystals 2013, 3, 257-274.

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