Crystals 2013, 3(2), 289-305; doi:10.3390/cryst3020289
Article

Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene

1 Institut de Microélectronique Electromagnétisme et Photonique et le LAboratoire d'Hyperfréquenceset de Caractérisation, IMEP-LAHC (UMR CNRS/INPG/UJF 5130), Grenoble INP Minatec, 3, ParvisLouis Nèel, BP 257, Grenoble F-38016, France 2 Catalan Institute of Nanotechnology (CIN2), Universitat Autónoma de Barcelona, Campus UAB,Bellaterra 08193, Spain 3 Ecole Normale Superieure de Lyon, 46, Allée d'Italie, Lyon 69007, France 4 Institute of Physics, Technical University of Lodz, ul. Wolczanska 219, Lodz 93-005, Poland 5 Barcelona Supercomputing Center (BSC), C/Jordi Girona 29, Barcelona E-08034, Spain 6 Institució Catalana de Recerca i Estudis Avanc¸ats (ICREA), Barcelona 08070, Spain
* Authors to whom correspondence should be addressed.
Received: 7 March 2013; Accepted: 1 April 2013 / Published: 8 April 2013
(This article belongs to the Special Issue Graphenes)
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Abstract: We present a survey of the effect of vacancies on quantum transport in graphene, exploring conduction regimes ranging from tunnelling to intrinsic transport phenomena. Vacancies, with density up to 2%, are distributed at random either in a balanced manner between the two sublattices or in a totally unbalanced configuration where only atoms sitting on a given sublattice are randomly removed. Quantum transmission shows a variety of different behaviours, which depend on the specific system geometry and disorder distribution. The investigation of the scaling laws of the most significant quantities allows a deep physical insight and the accurate prediction of their trend over a large energy region around the Dirac point.
Keywords: graphene; vacancies; quantum transport

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MDPI and ACS Style

Cresti, A.; Louvet, T.; Ortmann, F.; Van Tuan, D.; Lenarczyk, P.; Huhs, G.; Roche, S. Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene. Crystals 2013, 3, 289-305.

AMA Style

Cresti A, Louvet T, Ortmann F, Van Tuan D, Lenarczyk P, Huhs G, Roche S. Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene. Crystals. 2013; 3(2):289-305.

Chicago/Turabian Style

Cresti, Alessandro; Louvet, Thibaud; Ortmann, Frank; Van Tuan, Dinh; Lenarczyk, Paweł; Huhs, Georg; Roche, Stephan. 2013. "Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene." Crystals 3, no. 2: 289-305.

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