Crystals 2013, 3(2), 289-305; doi:10.3390/cryst3020289
Article

Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene

1,* email, 2,3email, 2email, 2email, 2,4email, 5email and 2,6,* email
Received: 7 March 2013; Accepted: 1 April 2013 / Published: 8 April 2013
(This article belongs to the Special Issue Graphenes)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: We present a survey of the effect of vacancies on quantum transport in graphene, exploring conduction regimes ranging from tunnelling to intrinsic transport phenomena. Vacancies, with density up to 2%, are distributed at random either in a balanced manner between the two sublattices or in a totally unbalanced configuration where only atoms sitting on a given sublattice are randomly removed. Quantum transmission shows a variety of different behaviours, which depend on the specific system geometry and disorder distribution. The investigation of the scaling laws of the most significant quantities allows a deep physical insight and the accurate prediction of their trend over a large energy region around the Dirac point.
Keywords: graphene; vacancies; quantum transport
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MDPI and ACS Style

Cresti, A.; Louvet, T.; Ortmann, F.; Van Tuan, D.; Lenarczyk, P.; Huhs, G.; Roche, S. Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene. Crystals 2013, 3, 289-305.

AMA Style

Cresti A, Louvet T, Ortmann F, Van Tuan D, Lenarczyk P, Huhs G, Roche S. Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene. Crystals. 2013; 3(2):289-305.

Chicago/Turabian Style

Cresti, Alessandro; Louvet, Thibaud; Ortmann, Frank; Van Tuan, Dinh; Lenarczyk, Paweł; Huhs, Georg; Roche, Stephan. 2013. "Impact of Vacancies on Diffusive and Pseudodiffusive Electronic Transport in Graphene." Crystals 3, no. 2: 289-305.

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