Crystals 2013, 3(1), 14-27; doi:10.3390/cryst3010014
Article

Bound States and Supercriticality in Graphene-Based Topological Insulators

Denis Klöpfer 1 email, Alessandro De Martino 2 email and Reinhold Egger 1,* email
1 Institut für Theoretische Physik, Heinrich-Heine-Universität, D-40225 Düsseldorf, Germany 2 Department of Mathematical Science, City University London, London EC1V 0HB, UK
* Author to whom correspondence should be addressed.
Received: 16 November 2012; in revised form: 17 December 2012 / Accepted: 9 January 2013 / Published: 21 January 2013
(This article belongs to the Special Issue Graphenes)
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Abstract: We study the bound state spectrum and the conditions for entering a supercritical regime in graphene with strong intrinsic and Rashba spin-orbit interactions within the topological insulator phase. Explicit results are provided for a disk-shaped potential well and for the Coulomb center problem.
Keywords: graphene; supercriticality; spin-orbit interaction

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MDPI and ACS Style

Klöpfer, D.; De Martino, A.; Egger, R. Bound States and Supercriticality in Graphene-Based Topological Insulators. Crystals 2013, 3, 14-27.

AMA Style

Klöpfer D, De Martino A, Egger R. Bound States and Supercriticality in Graphene-Based Topological Insulators. Crystals. 2013; 3(1):14-27.

Chicago/Turabian Style

Klöpfer, Denis; De Martino, Alessandro; Egger, Reinhold. 2013. "Bound States and Supercriticality in Graphene-Based Topological Insulators." Crystals 3, no. 1: 14-27.

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