Next Article in Journal
Next Article in Special Issue
Previous Article in Journal
Previous Article in Special Issue
Crystals 2013, 3(1), 14-27; doi:10.3390/cryst3010014
Article

Bound States and Supercriticality in Graphene-Based Topological Insulators

1
, 2
 and 1,*
Received: 16 November 2012; in revised form: 17 December 2012 / Accepted: 9 January 2013 / Published: 21 January 2013
(This article belongs to the Special Issue Graphenes)
View Full-Text   |   Download PDF [330 KB, uploaded 21 January 2013]
Abstract: We study the bound state spectrum and the conditions for entering a supercritical regime in graphene with strong intrinsic and Rashba spin-orbit interactions within the topological insulator phase. Explicit results are provided for a disk-shaped potential well and for the Coulomb center problem.
Keywords: graphene; supercriticality; spin-orbit interaction graphene; supercriticality; spin-orbit interaction
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Export to BibTeX |
EndNote


MDPI and ACS Style

Klöpfer, D.; De Martino, A.; Egger, R. Bound States and Supercriticality in Graphene-Based Topological Insulators. Crystals 2013, 3, 14-27.

AMA Style

Klöpfer D, De Martino A, Egger R. Bound States and Supercriticality in Graphene-Based Topological Insulators. Crystals. 2013; 3(1):14-27.

Chicago/Turabian Style

Klöpfer, Denis; De Martino, Alessandro; Egger, Reinhold. 2013. "Bound States and Supercriticality in Graphene-Based Topological Insulators." Crystals 3, no. 1: 14-27.

Crystals EISSN 2073-4352 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert