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Micromachines 2017, 8(4), 95; doi:10.3390/mi8040095

Two-Dimensional Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors with Differential Structure

Key Laboratory of Electronics Engineering, College of Heilongjiang Province, Heilongjiang University, Harbin 150080, China
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Academic Editor: Nam-Trung Nguyen
Received: 10 December 2016 / Revised: 16 February 2017 / Accepted: 17 March 2017 / Published: 23 March 2017
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Abstract

A two-dimensional (2D) magnetic field sensor consisting of four silicon magnetic sensitive transistors (SMSTs) with similar characteristics is presented in this paper. By use of micro-electromechanical systems (MEMS) and integrated packaging technology, this sensor fabricated by using the silicon wafer with a <100> orientation and high resistivity, was packaged on printed circuit boards (PCBs). In order to detect the magnetic fields in the x and y axes directions, two of the four SMSTs with opposite magnetic sensitive directions were located along the x and −x axes directions, symmetrically, and the others were located along the y and −y axes directions. The experimental results show that when the VCE = 10.0 V and IB = 6.0 mA, the magnetic sensitivities of the sensor in the x and y axes directions are 366.0 mV/T and 365.0 mV/T, respectively. It is possible to measure the 2D magnetic field and improve the magnetic sensitivity, significantly. View Full-Text
Keywords: two-dimensional (2D) magnetic field sensor; silicon magnetic sensitive transistor; differential structure; micro-electromechanical systems (MEMS) technology two-dimensional (2D) magnetic field sensor; silicon magnetic sensitive transistor; differential structure; micro-electromechanical systems (MEMS) technology
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Yang, X.; Zhao, X.; Bai, Y.; Lv, M.; Wen, D. Two-Dimensional Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors with Differential Structure. Micromachines 2017, 8, 95.

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