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Micromachines 2015, 6(2), 281-290; doi:10.3390/mi6020281

Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators

1
Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2
State Key Laboratory of Transducer Technology, Chinese Academy of Sciences, Beijing 100083, China
*
Author to whom correspondence should be addressed.
Academic Editor: Joost Lötters
Received: 12 October 2014 / Accepted: 6 February 2015 / Published: 16 February 2015
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Abstract

We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameters are reported and theoretical analyses are given. By optimizing the etching parameters, the bottom surface roughness of 1.98 nm and the sidewall angle of 83° were achieved. This etching process can meet the manufacturing requirements of aluminum nitride MEMS resonator. View Full-Text
Keywords: aluminum nitride; micro-electro-mechanical-system; inductively coupled plasma etching aluminum nitride; micro-electro-mechanical-system; inductively coupled plasma etching
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Yang, J.; Si, C.; Han, G.; Zhang, M.; Ma, L.; Zhao, Y.; Ning, J. Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators. Micromachines 2015, 6, 281-290.

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