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Self-Assembled Three-Dimensional Non-Volatile Memories
MESA+ and IMPACT Research Institutes, University of Twente, PoBox 217, 7500 AE Enschede, The Netherlands
Freiburg Institute for Advanced Studies (FRIAS), University of Freiburg, Freiburg, Germany
* Author to whom correspondence should be addressed.
Received: 17 November 2009 / Accepted: 4 January 2010 / Published: 18 January 2010
Abstract: The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, either as a loosely organised associative network or into a cross-point architecture. When using principles requiring electrical connection, we show the need for transistor-based cross-talk isolation. Cross-talk can be avoided by reusing the coincident current magnetic ring core memory architecture invented in 1953. We demonstrate that self-assembly of three-dimensional ring core memories is in principle possible by combining corner lithography and anisotropic etching into single crystal silicon.
Keywords: data storage; self-assembly; ring core; MEMS; magnetic
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Cite This Article
MDPI and ACS Style
Abelmann, L.; Tas, N.; Berenschot, E.; Elwenspoek, M. Self-Assembled Three-Dimensional Non-Volatile Memories. Micromachines 2010, 1, 1-18.
Abelmann L, Tas N, Berenschot E, Elwenspoek M. Self-Assembled Three-Dimensional Non-Volatile Memories. Micromachines. 2010; 1(1):1-18.
Abelmann, Leon; Tas, Niels; Berenschot, Erwin; Elwenspoek, Miko. 2010. "Self-Assembled Three-Dimensional Non-Volatile Memories." Micromachines 1, no. 1: 1-18.