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Micromachines 2010, 1(1), 1-18;

Self-Assembled Three-Dimensional Non-Volatile Memories

MESA+ and IMPACT Research Institutes, University of Twente, PoBox 217, 7500 AE Enschede, The Netherlands
Freiburg Institute for Advanced Studies (FRIAS), University of Freiburg, Freiburg, Germany
Author to whom correspondence should be addressed.
Received: 17 November 2009 / Accepted: 4 January 2010 / Published: 18 January 2010
(This article belongs to the Special Issue Self-Assembly)
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The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, either as a loosely organised associative network or into a cross-point architecture. When using principles requiring electrical connection, we show the need for transistor-based cross-talk isolation. Cross-talk can be avoided by reusing the coincident current magnetic ring core memory architecture invented in 1953. We demonstrate that self-assembly of three-dimensional ring core memories is in principle possible by combining corner lithography and anisotropic etching into single crystal silicon. View Full-Text
Keywords: data storage; self-assembly; ring core; MEMS; magnetic data storage; self-assembly; ring core; MEMS; magnetic

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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Abelmann, L.; Tas, N.; Berenschot, E.; Elwenspoek, M. Self-Assembled Three-Dimensional Non-Volatile Memories. Micromachines 2010, 1, 1-18.

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