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Micromachines 2010, 1(1), 1-18; doi:10.3390/mi1010001

Self-Assembled Three-Dimensional Non-Volatile Memories

1,* , 1
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Received: 17 November 2009 / Accepted: 4 January 2010 / Published: 18 January 2010
(This article belongs to the Special Issue Self-Assembly)
Download PDF [3219 KB, uploaded 29 January 2010]
Abstract: The continuous increase in capacity of non-volatile data storage systems will lead to bit densities of one bit per atom in 2020. Beyond this point, capacity can be increased by moving into the third dimension. We propose to use self-assembly of nanosized elements, either as a loosely organised associative network or into a cross-point architecture. When using principles requiring electrical connection, we show the need for transistor-based cross-talk isolation. Cross-talk can be avoided by reusing the coincident current magnetic ring core memory architecture invented in 1953. We demonstrate that self-assembly of three-dimensional ring core memories is in principle possible by combining corner lithography and anisotropic etching into single crystal silicon.
Keywords: data storage; self-assembly; ring core; MEMS; magnetic data storage; self-assembly; ring core; MEMS; magnetic
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Abelmann, L.; Tas, N.; Berenschot, E.; Elwenspoek, M. Self-Assembled Three-Dimensional Non-Volatile Memories. Micromachines 2010, 1, 1-18.

AMA Style

Abelmann L, Tas N, Berenschot E, Elwenspoek M. Self-Assembled Three-Dimensional Non-Volatile Memories. Micromachines. 2010; 1(1):1-18.

Chicago/Turabian Style

Abelmann, Leon; Tas, Niels; Berenschot, Erwin; Elwenspoek, Miko. 2010. "Self-Assembled Three-Dimensional Non-Volatile Memories." Micromachines 1, no. 1: 1-18.

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