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Materials 2016, 9(8), 680; doi:10.3390/ma9080680

Doping Effect of Graphene Nanoplatelets on Electrical Insulation Properties of Polyethylene: From Macroscopic to Molecular Scale

1
Key Laboratory of Engineering Dielectric and its Application, Ministry of Education, Harbin University of Science and Technology, Harbin 150040, China
2
College of Chemical and Environmental Engineering, Harbin University of Science and Technology, Harbin 150040, China
3
Shanghai Qifan Wire and Cable Co., Ltd., Shanghai 200008, China
*
Author to whom correspondence should be addressed.
Academic Editor: Der-Jang Liaw
Received: 20 April 2016 / Revised: 28 June 2016 / Accepted: 6 August 2016 / Published: 10 August 2016
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Abstract

The doping effect of graphene nanoplatelets (GNPs) on electrical insulation properties of polyethylene (PE) was studied by combining experimental and theoretical methods. The electric conduction properties and trap characteristics were tested for pure PE and PE/GNPs composites by using a direct measurement method and a thermal stimulated current (TSC) method. It was found that doping smaller GNPs is more beneficial to decrease the conductivity of PE/GNPs. The PE/GNPs composite with smaller size GNPs mainly introduces deep energy traps, while with increasing GNPs size, besides deep energy traps, shallow energy traps are also introduced. These results were also confirmed by density functional theory (DFT) and the non-equilibrium Green’s function (NEGF) method calculations. Therefore, doping small size GNPs is favorable for trapping charge carriers and enhancing insulation ability, which is suggested as an effective strategy in exploring powerful insulation materials. View Full-Text
Keywords: graphene nanoplatelets doping effect; insulation property; polyethylene graphene nanoplatelets doping effect; insulation property; polyethylene
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Jing, Z.; Li, C.; Zhao, H.; Zhang, G.; Han, B. Doping Effect of Graphene Nanoplatelets on Electrical Insulation Properties of Polyethylene: From Macroscopic to Molecular Scale. Materials 2016, 9, 680.

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