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Materials 2015, 8(11), 7745-7756; doi:10.3390/ma8115417

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes

1
Institute of Electro-Optical and Materials Science, National Formosa University, Huwei, Yunlin 63201, Taiwan
2
Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Stephen D. Prior
Received: 29 August 2015 / Revised: 4 November 2015 / Accepted: 9 November 2015 / Published: 16 November 2015
(This article belongs to the Special Issue Selected Papers from ICASI 2015)
View Full-Text   |   Download PDF [1742 KB, uploaded 16 November 2015]   |  

Abstract

This paper addressed the effect of post-annealed treatment on the electroluminescence (EL) of an n-ZnO/p-GaN heterojunction light-emitting diode (LED). The bluish light emitted from the 450 °C-annealed LED became reddish as the LED annealed at a temperature of 800 °C under vacuum atmosphere. The origins of the light emission for these LEDs annealed at various temperatures were studied using measurements of electrical property, photoluminescence, and Auger electron spectroscopy (AES) depth profiles. A blue-violet emission located at 430 nm was associated with intrinsic transitions between the bandgap of n-ZnO and p-GaN, the green-yellow emission at 550 nm mainly originating from the deep-level transitions of native defects in the n-ZnO and p-GaN surfaces, and the red emission at 610 nm emerging from the Ga-O interlayer due to interdiffusion at the n-ZnO/p-GaN interface. The above-mentioned emissions also supported the EL spectra of LEDs annealed at 700 °C under air, nitrogen, and oxygen atmospheres, respectively. View Full-Text
Keywords: electroluminescence; n-ZnO/p-GaN heterojunction; light-emitting diode; photoluminescence; AES depth profile electroluminescence; n-ZnO/p-GaN heterojunction; light-emitting diode; photoluminescence; AES depth profile
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Hsu, K.-C.; Hsiao, W.-H.; Lee, C.-T.; Chen, Y.-T.; Liu, D.-S. Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes. Materials 2015, 8, 7745-7756.

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