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Materials 2015, 8(10), 7191-7198; doi:10.3390/ma8105374

Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory

1
Department of Electrical Engineering, Institute of Microelectronics, Advanced Optoelectronic Technology Center, National Cheng-Kung University, Tainan 701, Taiwan
2
Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Teen-Hang Meen
Received: 30 August 2015 / Revised: 11 October 2015 / Accepted: 19 October 2015 / Published: 26 October 2015
(This article belongs to the Special Issue Selected Papers from ICASI 2015)
View Full-Text   |   Download PDF [3811 KB, uploaded 26 October 2015]   |  

Abstract

Strontium titanate nickelate (STN) thin films on indium tin oxide (ITO)/glass substrate were synthesized using the sol-gel method for resistive random access memory (RRAM) applications. Aluminum (Al), titanium (Ti), tungsten (W), gold (Au) and platinum (Pt) were used as top electrodes in the STN-based RRAM to probe the switching behavior. The bipolar resistive switching behavior of the set and reset voltages is in opposite bias in the Al/STN/ITO and Pt/STN/ITO RRAMs, which can be partly ascribed to the different work functions of top electrodes in the ITO. Analyses of the fitting results and temperature-dependent performances showed that the Al/STN/ITO switching was mainly attributed to the absorption/release of oxygen-based functional groups, whereas the Pt/STN/ITO switching can be associated with the diffusion of metal electrode ions. The Al/STN/ITO RRAM demonstrated a high resistance ratio of >106 between the high-resistance state (HRS) and the low-resistance state (LRS), as well as a retention ability of >105 s. Furthermore, the Pt/STN/ITO RRAM displayed a HRS/LRS resistance ratio of >103 and a retention ability of >105 s. View Full-Text
Keywords: sol-gel; resistive random access memory; strontium titanate nickelate sol-gel; resistive random access memory; strontium titanate nickelate
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Lee, K.-J.; Wang, L.-W.; Chiang, T.-K.; Wang, Y.-H. Effects of Electrodes on the Switching Behavior of Strontium Titanate Nickelate Resistive Random Access Memory. Materials 2015, 8, 7191-7198.

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