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Materials 2014, 7(3), 1539-1554; doi:10.3390/ma7031539
Article

Erbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD

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Received: 26 November 2013; in revised form: 17 February 2014 / Accepted: 19 February 2014 / Published: 27 February 2014
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Abstract: The integration of photonic materials into CMOS processing involves the use of new materials. A simple one-step metal-organic radio frequency plasma enhanced chemical vapor deposition system (RF-PEMOCVD) was deployed to grow erbium-doped amorphous carbon thin films (a-C:(Er)) on Si substrates at low temperatures (<200 °C). A partially fluorinated metal-organic compound, tris(6,6,7,7,8,8,8-heptafluoro-2,2-dimethyl-3,5- octanedionate) Erbium(+III) or abbreviated Er(fod)3, was incorporated in situ into a-C based host. Six-fold enhancement of Er room-temperature photoluminescence at 1.54 µm was demonstrated by deuteration of the a-C host. Furthermore, the effect of RF power and substrate temperature on the photoluminescence of a-C:D(Er) films was investigated and analyzed in terms of the film structure. Photoluminescence signal increases with increasing RF power, which is the result of an increase in [O]/[Er] ratio and the respective erbium-oxygen coordination number. Moreover, photoluminescence intensity decreases with increasing substrate temperature, which is attributed to an increased desorption rate or a lower sticking coefficient of the fluorinated fragments during film growth and hence [Er] decreases. In addition, it is observed that Er concentration quenching begins at ~2.2 at% and continues to increase until 5.5 at% in the studied a-C:D(Er) matrix. This technique provides the capability of doping Er in a vertically uniform profile.
Keywords: RF-PEMOCVD; erbium metal-organic compound; deuterated amorphous carbon (a-C:D); fluorination RF-PEMOCVD; erbium metal-organic compound; deuterated amorphous carbon (a-C:D); fluorination
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Hsu, H.-L.; Leong, K.R.; Teng, I.-J.; Halamicek, M.; Juang, J.-Y.; Jian, S.-R.; Qian, L.; Kherani, N.P. Erbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD. Materials 2014, 7, 1539-1554.

AMA Style

Hsu H-L, Leong KR, Teng I-J, Halamicek M, Juang J-Y, Jian S-R, Qian L, Kherani NP. Erbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD. Materials. 2014; 7(3):1539-1554.

Chicago/Turabian Style

Hsu, Hui-Lin; Leong, Keith R.; Teng, I-Ju; Halamicek, Michael; Juang, Jenh-Yih; Jian, Sheng-Rui; Qian, Li; Kherani, Nazir P. 2014. "Erbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD." Materials 7, no. 3: 1539-1554.


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