Materials 2012, 5(11), 2353-2359; doi:10.3390/ma5112353

Carbon Nanotube Electron Emitter for X-ray Imaging

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Received: 21 September 2012; in revised form: 24 October 2012 / Accepted: 12 November 2012 / Published: 16 November 2012
(This article belongs to the Special Issue X-ray Imaging in Materials Science)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: The carbon nanotube field emitter array was grown on silicon substrate through a resist-assisted patterning (RAP) process. The shape of the carbon nanotube array is elliptical with 2.0 × 0.5 mm2 for an isotropic focal spot size at anode target. The field emission properties with triode electrodes show a gate turn-on field of 3 V/µm at an anode emission current of 0.1 mA. The author demonstrated the X-ray source with triode electrode structure utilizing the carbon nanotube emitter, and the transmitted X-ray image was of high resolution.
Keywords: carbon nanotube; X-ray; resist assisted patterning
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MDPI and ACS Style

Ryu, J.H.; Kang, J.S.; Park, K.C. Carbon Nanotube Electron Emitter for X-ray Imaging. Materials 2012, 5, 2353-2359.

AMA Style

Ryu JH, Kang JS, Park KC. Carbon Nanotube Electron Emitter for X-ray Imaging. Materials. 2012; 5(11):2353-2359.

Chicago/Turabian Style

Ryu, Je H.; Kang, Jung S.; Park, Kyu C. 2012. "Carbon Nanotube Electron Emitter for X-ray Imaging." Materials 5, no. 11: 2353-2359.

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