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Materials 2012, 5(11), 2353-2359; doi:10.3390/ma5112353
Article

Carbon Nanotube Electron Emitter for X-ray Imaging

,
 and
*
Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701, Korea
* Author to whom correspondence should be addressed.
Received: 21 September 2012 / Revised: 24 October 2012 / Accepted: 12 November 2012 / Published: 16 November 2012
(This article belongs to the Special Issue X-ray Imaging in Materials Science)
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Abstract

The carbon nanotube field emitter array was grown on silicon substrate through a resist-assisted patterning (RAP) process. The shape of the carbon nanotube array is elliptical with 2.0 × 0.5 mm2 for an isotropic focal spot size at anode target. The field emission properties with triode electrodes show a gate turn-on field of 3 V/µm at an anode emission current of 0.1 mA. The author demonstrated the X-ray source with triode electrode structure utilizing the carbon nanotube emitter, and the transmitted X-ray image was of high resolution.
Keywords: carbon nanotube; X-ray; resist assisted patterning carbon nanotube; X-ray; resist assisted patterning
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
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Ryu, J.H.; Kang, J.S.; Park, K.C. Carbon Nanotube Electron Emitter for X-ray Imaging. Materials 2012, 5, 2353-2359.

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