Materials 2011, 4(5), 941-951; doi:10.3390/ma4050941
Article

Layer Transfer from Chemically Etched 150 mm Porous Si Substrates

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Received: 20 April 2011; Accepted: 19 May 2011 / Published: 23 May 2011
(This article belongs to the Special Issue Porous Materials 2011)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: We demonstrate for the first time the successful layer transfer of an epitaxially grown monocrystalline Si film from a purely chemically etched porous Si substrate of 150 mm diameter to a glass carrier. The surface conditioning for all Si layer transfer processes based on porous Si has been, up to now without exception, carried out by electrochemical etching. In contrast, our chemical stain etching process uses an aqueous HF-rich HF/HNO3 solution. The porosity increases with increasing doping concentration of the Si substrate wafer and with increasing porous layer thickness. In contrast to the electrochemically etched double layers, the porosity profile of the stain etched substrates is highest at the original wafer surface and lowest at the interface between the porous layer and the Si bulk. The epitaxy process is adapted to the high porosity at the surface with regard to the reorganization of the porous layer.
Keywords: layer transfer process; porous silicon; stain etching
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MDPI and ACS Style

Terheiden, B.; Hensen, J.; Wolf, A.; Horbelt, R.; Plagwitz, H.; Brendel, R. Layer Transfer from Chemically Etched 150 mm Porous Si Substrates. Materials 2011, 4, 941-951.

AMA Style

Terheiden B, Hensen J, Wolf A, Horbelt R, Plagwitz H, Brendel R. Layer Transfer from Chemically Etched 150 mm Porous Si Substrates. Materials. 2011; 4(5):941-951.

Chicago/Turabian Style

Terheiden, Barbara; Hensen, Jan; Wolf, Andreas; Horbelt, Renate; Plagwitz, Heiko; Brendel, Rolf. 2011. "Layer Transfer from Chemically Etched 150 mm Porous Si Substrates." Materials 4, no. 5: 941-951.

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