Materials 2011, 4(5), 929-940; doi:10.3390/ma4050929

Nanohardness and Residual Stress in TiN Coatings

1 Laboratory of Laser Technology, CICATA-IPN, Altamira Unit, México C.P 89600, México 2 Institute of Science and Technology of Materials (IMRE), Havana University, La Habana, Cuba C.P 10400, México 3 Centro de Innovación, Investigación y Desarrollo en Ingeniería y Tecnología (CIIDIT), Universidad Autónoma de Nuevo León, Monterrey, Nuevo León, México C.P. 66450, México
* Author to whom correspondence should be addressed.
Received: 29 March 2011; in revised form: 27 April 2011 / Accepted: 13 May 2011 / Published: 17 May 2011
(This article belongs to the Special Issue Hard Materials: Advances in Synthesis and Understanding)
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Abstract: TiN films were prepared by the Cathodic arc evaporation deposition method under different negative substrate bias. AFM image analyses show that the growth mode of biased coatings changes from 3D island to lateral when the negative bias potential is increased. Nanohardness of the thin films was measured by nanoindentation, and residual stress was determined using Grazing incidence X ray diffraction. The maximum value of residual stress is reached at −100 V substrate bias coinciding with the biggest values of adhesion and nanohardness. Nanoindentation measurement proves that the force-depth curve shifts due to residual stress. The experimental results demonstrate that nanohardness is seriously affected by the residual stress.
Keywords: negative substrate bias potential; residual stress; nanohardness; nanoindentation

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MDPI and ACS Style

Hernández, L.C.; Ponce, L.; Fundora, A.; López, E.; Pérez, E. Nanohardness and Residual Stress in TiN Coatings. Materials 2011, 4, 929-940.

AMA Style

Hernández LC, Ponce L, Fundora A, López E, Pérez E. Nanohardness and Residual Stress in TiN Coatings. Materials. 2011; 4(5):929-940.

Chicago/Turabian Style

Hernández, Luis Carlos; Ponce, Luis; Fundora, Abel; López, Enrique; Pérez, Eduardo. 2011. "Nanohardness and Residual Stress in TiN Coatings." Materials 4, no. 5: 929-940.

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