Open AccessThis article is
- freely available
Nanohardness and Residual Stress in TiN Coatings
Laboratory of Laser Technology, CICATA-IPN, Altamira Unit, México C.P 89600, México
Institute of Science and Technology of Materials (IMRE), Havana University, La Habana, Cuba C.P 10400, México
Centro de Innovación, Investigación y Desarrollo en Ingeniería y Tecnología (CIIDIT), Universidad Autónoma de Nuevo León, Monterrey, Nuevo León, México C.P. 66450, México
* Author to whom correspondence should be addressed.
Received: 29 March 2011; in revised form: 27 April 2011 / Accepted: 13 May 2011 / Published: 17 May 2011
Abstract: TiN films were prepared by the Cathodic arc evaporation deposition method under different negative substrate bias. AFM image analyses show that the growth mode of biased coatings changes from 3D island to lateral when the negative bias potential is increased. Nanohardness of the thin films was measured by nanoindentation, and residual stress was determined using Grazing incidence X ray diffraction. The maximum value of residual stress is reached at −100 V substrate bias coinciding with the biggest values of adhesion and nanohardness. Nanoindentation measurement proves that the force-depth curve shifts due to residual stress. The experimental results demonstrate that nanohardness is seriously affected by the residual stress.
Keywords: negative substrate bias potential; residual stress; nanohardness; nanoindentation
Article StatisticsClick here to load and display the download statistics.
Notes: Multiple requests from the same IP address are counted as one view.
Cite This Article
MDPI and ACS Style
Hernández, L.C.; Ponce, L.; Fundora, A.; López, E.; Pérez, E. Nanohardness and Residual Stress in TiN Coatings. Materials 2011, 4, 929-940.
Hernández LC, Ponce L, Fundora A, López E, Pérez E. Nanohardness and Residual Stress in TiN Coatings. Materials. 2011; 4(5):929-940.
Hernández, Luis Carlos; Ponce, Luis; Fundora, Abel; López, Enrique; Pérez, Eduardo. 2011. "Nanohardness and Residual Stress in TiN Coatings." Materials 4, no. 5: 929-940.