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Materials 2011, 4(6), 952-962; doi:10.3390/ma4060952

Study of Ni Metallization in Macroporous Si Using Wet Chemistry for Radio Frequency Cross-Talk Isolation in Mixed Signal Integrated Circuits

Department of Materials Science and Engineering, University of California at Los Angeles, Los Angeles, CA 90095, USA
Department of Chemical Engineering, University of Pittsburg, Pittsburgh, PA 15260, USA
Author to whom correspondence should be addressed.
Received: 9 May 2011 / Accepted: 23 May 2011 / Published: 25 May 2011
(This article belongs to the Special Issue Porous Materials 2011)
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A highly conductive moat or Faraday cage of through-the-wafer thickness in Si substrate was proposed to be effective in shielding electromagnetic interference thereby reducing radio frequency (RF) cross-talk in high performance mixed signal integrated circuits. Such a structure was realized by metallization of selected ultra-high-aspect-ratio macroporous regions that were electrochemically etched in p Si substrates. The metallization process was conducted by means of wet chemistry in an alkaline aqueous solution containing Ni2+ without reducing agent. It is found that at elevated temperature during immersion, Ni2+ was rapidly reduced and deposited into macroporous Si and a conformal metallization of the macropore sidewalls was obtained in a way that the entire porous Si framework was converted to Ni. A conductive moat was as a result incorporated into p Si substrate. The experimentally measured reduction of crosstalk in this structure is 5~18 dB at frequencies up to 35 GHz. View Full-Text
Keywords: RF cross-talk isolation; macroporous Si; Ni metallization RF cross-talk isolation; macroporous Si; Ni metallization

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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Zhang, X.; Xu, C.; Chong, K.; Tu, K.-N.; Xie, Y.-H. Study of Ni Metallization in Macroporous Si Using Wet Chemistry for Radio Frequency Cross-Talk Isolation in Mixed Signal Integrated Circuits. Materials 2011, 4, 952-962.

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