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Journal: Materials, 2011
Volume: 4
Page(s): 2092-2107
Article:
Arsenic-Doped High-Resistivity-Silicon Epitaxial Layers for Integrating Low-Capacitance Diodes
Sakic, A.; Scholtes, T.L.M.; Boer, W.; Golshani, N.; Derakhshandeh, J.; Nanver, L.K.
http://www.mdpi.com/1996-1944/4/12/2092
