Materials 2011, 4(10), 1835-1845; doi:10.3390/ma4101835

The Origin of Tc Enhancement in Heterostructure Cuprate Superconductors

1 and 1,2,* email
Received: 2 August 2011; in revised form: 24 September 2011 / Accepted: 9 October 2011 / Published: 17 October 2011
(This article belongs to the Special Issue New High Tc Superconductor)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: Recent experiments on heterostructures composed of two or more films of cuprate superconductors of different oxygen doping levels have shown a remarkable Tc enhancement (up to 50%) relative to single compound films. We provide a simple explanation of the enhancement which arises naturally from a collection of experimental works. We show that the enhancement could be caused by a structural change in the lattice, namely an increase in the distance of the apical oxygen from the copper-oxygen plane. This increase modifies the effective off-site interaction in the plane which in turn enhances the d-wave superconductivity order parameter. To illustrate this point we study the extended Hubbard model using the fluctuation exchange approximation.
Keywords: high Tc superconductivity; heterostructures; cuprates
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MDPI and ACS Style

Bergman, D.L.; Pereg-Barnea, T. The Origin of Tc Enhancement in Heterostructure Cuprate Superconductors. Materials 2011, 4, 1835-1845.

AMA Style

Bergman DL, Pereg-Barnea T. The Origin of Tc Enhancement in Heterostructure Cuprate Superconductors. Materials. 2011; 4(10):1835-1845.

Chicago/Turabian Style

Bergman, Doron L.; Pereg-Barnea, Tamar. 2011. "The Origin of Tc Enhancement in Heterostructure Cuprate Superconductors." Materials 4, no. 10: 1835-1845.

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