Materials 2011, 4(10), 1835-1845; doi:10.3390/ma4101835
Article

The Origin of Tc Enhancement in Heterostructure Cuprate Superconductors

1 Department of Physics, California Institute of Technology, 1200 E. California Blvd, MC114-36, Pasadena, CA 91125, USA 2 Department of Physics, McGill University, Montreal, Quebec H3A 2T8, Canada
* Author to whom correspondence should be addressed.
Received: 2 August 2011; in revised form: 24 September 2011 / Accepted: 9 October 2011 / Published: 17 October 2011
(This article belongs to the Special Issue New High Tc Superconductor)
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Abstract: Recent experiments on heterostructures composed of two or more films of cuprate superconductors of different oxygen doping levels have shown a remarkable Tc enhancement (up to 50%) relative to single compound films. We provide a simple explanation of the enhancement which arises naturally from a collection of experimental works. We show that the enhancement could be caused by a structural change in the lattice, namely an increase in the distance of the apical oxygen from the copper-oxygen plane. This increase modifies the effective off-site interaction in the plane which in turn enhances the d-wave superconductivity order parameter. To illustrate this point we study the extended Hubbard model using the fluctuation exchange approximation.
Keywords: high Tc superconductivity; heterostructures; cuprates

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MDPI and ACS Style

Bergman, D.L.; Pereg-Barnea, T. The Origin of Tc Enhancement in Heterostructure Cuprate Superconductors. Materials 2011, 4, 1835-1845.

AMA Style

Bergman DL, Pereg-Barnea T. The Origin of Tc Enhancement in Heterostructure Cuprate Superconductors. Materials. 2011; 4(10):1835-1845.

Chicago/Turabian Style

Bergman, Doron L.; Pereg-Barnea, Tamar. 2011. "The Origin of Tc Enhancement in Heterostructure Cuprate Superconductors." Materials 4, no. 10: 1835-1845.

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