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Surface Nano-Structuring by Adsorption and Chemical Reactions
Saitama Institute of Technology, Research Center of Advanced Sciences 1690 Okabe, Fukaya, Saitama, Japan
Received: 12 July 2010; in revised form: 6 August 2010 / Accepted: 12 August 2010 / Published: 27 August 2010
Abstract: Nano-structuring of the surface caused by adsorption of molecules or atoms and by the reaction of surface atoms with adsorbed species are reviewed from a chemistry viewpoint. Self-assembly of adsorbed species is markedly influenced by weak mutual interactions and the local strain of the surface induced by the adsorption. Nano-structuring taking place on the surface is well explained by the notion of a quasi-molecule provided by the reaction of surface atoms with adsorbed species. Self-assembly of quasi-molecules by weak internal bonding provides quasi-compounds on a specific surface. Various nano-structuring phenomena are discussed: (i) self-assembly of adsorbed molecules and atoms; (ii) self-assembly of quasi-compounds; (iii) formation of nano-composite surfaces; (iv) controlled growth of nano-materials on composite surfaces. Nano-structuring processes are not always controlled by energetic feasibility, that is, the formation of nano-composite surface and the growth of nano-particles on surfaces are often controlled by the kinetics. The idea of the “kinetic controlled molding” might be valuable to design nano-materials on surfaces.
Keywords: self-assembly; nano-structuring; nano-dots and lines; formation and array of quasi-compounds; reaction of surface atoms; phase boundaries; reconstruction; Cu(100); Cu(110); Ag(110); Ni(110); Au(111)-hex; Si(111)-7 × 7; electronic and magnetic properties of nano-metals
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MDPI and ACS Style
Tanaka, K.-I. Surface Nano-Structuring by Adsorption and Chemical Reactions. Materials 2010, 3, 4518-4549.
Tanaka K-I. Surface Nano-Structuring by Adsorption and Chemical Reactions. Materials. 2010; 3(9):4518-4549.
Tanaka, Ken-ichi. 2010. "Surface Nano-Structuring by Adsorption and Chemical Reactions." Materials 3, no. 9: 4518-4549.