Next Article in Journal
In Vivo Damage of the Head-Neck Junction in Hard-on-Hard Total Hip Replacements: Effect of Femoral Head Size, Metal Combination, and 12/14 Taper Design
Next Article in Special Issue
Structure and Photoluminescence Properties of Sm3+ Ion-Doped YInGe2O7 Phosphor
Previous Article in Journal
Improving the Strength of ZTA Foams with Different Strategies: Immersion Infiltration and Recoating
Previous Article in Special Issue
Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells
Article Menu
Issue 7 (July) cover image

Export Article

Open AccessArticle
Materials 2017, 10(7), 737; https://doi.org/10.3390/ma10070737

Plasmonic Light Scattering in Textured Silicon Solar Cells with Indium Nanoparticles from Normal to Non-Normal Light Incidence

1
Department of Electro-Optical Engineering, National Taipei University of Technology, No. 1, Section 3, Zhongxial East Road, Taipei 10608, Taiwan
2
Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Section 4, Roosevelt Road, Taipei 10617, Taiwan
*
Author to whom correspondence should be addressed.
Received: 31 May 2017 / Revised: 27 June 2017 / Accepted: 29 June 2017 / Published: 1 July 2017
(This article belongs to the Special Issue Selected Papers from IEEE ICASI 2017)
View Full-Text   |   Download PDF [5915 KB, uploaded 11 July 2017]   |  

Abstract

In this study, we sought to improve the light trapping of textured silicon solar cells using the plasmonic light scattering of indium nanoparticles (In NPs) of various dimensions. The light trapping modes of textured-silicon surfaces with and without In NPs were investigated at an angle of incidence (AOI) ranging from 0° to 75°. The optical reflectance, external quantum efficiency (EQE), and photovoltaic performance were first characterized under an AOI of 0°. We then compared the EQE and photovoltaic current density-voltage (J-V) as a function of AOI in textured silicon solar cells with and without In NPs. We observed a reduction in optical reflectance and an increase in EQE when the cells textured with pyramidal structures were coated with In NPs. We also observed an impressive increase in the average weighted external quantum efficiency (∆EQEw) and short-circuit current-density (∆Jsc) in cells with In NPs when illuminated under a higher AOI. The ∆EQEw values of cells with In NPs were 0.37% higher than those without In NPs under an AOI of 0°, and 3.48% higher under an AOI of 75°. The ∆Jsc values of cells with In NPs were 0.50% higher than those without In NPs under an AOI of 0°, and 4.57% higher under an AOI of 75°. The application of In NPs clearly improved the light trapping effects. This can be attributed to the effects of plasmonic light-scattering over the entire wavelength range as well as an expanded angle of incident light. View Full-Text
Keywords: plasmonic light scattering; light trapping modes; indium nanoparticles (In NPs); textured silicon solar cells plasmonic light scattering; light trapping modes; indium nanoparticles (In NPs); textured silicon solar cells
Figures

Graphical abstract

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Ho, W.-J.; Lin, J.-C.; Liu, J.-J.; Yeh, C.-W.; Syu, H.-J.; Lin, C.-F. Plasmonic Light Scattering in Textured Silicon Solar Cells with Indium Nanoparticles from Normal to Non-Normal Light Incidence. Materials 2017, 10, 737.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Materials EISSN 1996-1944 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top