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Materials 2017, 10(6), 583; doi:10.3390/ma10060583

Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001)

1,†,* , 2,†
,
2,†
,
3
and
2
1
School of Science, Xi’an Polytechnic University, Xi’an 710048, China
2
Department of Electronic Engineering, Xi’an University of Technology, Xi’an 710048, China
3
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China
These authors contributed equally to this work.
*
Author to whom correspondence should be addressed.
Academic Editor: Der-Jang Liaw
Received: 15 March 2017 / Revised: 18 May 2017 / Accepted: 19 May 2017 / Published: 25 May 2017
View Full-Text   |   Download PDF [1678 KB, uploaded 25 May 2017]   |  

Abstract

The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm2, the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm2. Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time. View Full-Text
Keywords: Si/6H-SiC heterostructure; doping superlattice; photoelectric properties; chemical vapor deposition; transmission electron microscopy Si/6H-SiC heterostructure; doping superlattice; photoelectric properties; chemical vapor deposition; transmission electron microscopy
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MDPI and ACS Style

Li, L.; Zang, Y.; Hu, J.; Lin, S.; Chen, Z. Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001). Materials 2017, 10, 583.

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