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Materials 2017, 10(1), 24; doi:10.3390/ma10010024

Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film

1
Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China
2
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Changchun 130033, China
3
Integrated System for Laser Applications Group, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China
*
Authors to whom correspondence should be addressed.
Academic Editor: Pedro Barquinha
Received: 13 September 2016 / Revised: 22 December 2016 / Accepted: 22 December 2016 / Published: 1 January 2017
(This article belongs to the Special Issue Oxide Semiconductor Thin-Film Transistor)
View Full-Text   |   Download PDF [7117 KB, uploaded 1 January 2017]   |  

Abstract

The effect of intrinsic stress on the structure and physical properties of silicon-tin-oxide (STO) films have been investigated. Since a state of tensile stress is available in as-deposited films, the value of stress can be exponentially enhanced when the annealing temperature is increased. The tensile stress is able to not only suppress the crystallization and widen the optical band gap of STO films, but also reduce defects of STO films. In this report, the good electrical performance of STO thin-film transistors (TFTs) can be obtained when annealing temperature is 450 °C. This includes a value of saturation mobility that can be reached at 6.7 cm2/Vs, a ratio of Ion/Ioff as 7.34 × 107, a steep sub-threshold swing at 0.625 V/decade, and a low trap density of 7.96 × 1011 eV−1·cm−2, respectively. View Full-Text
Keywords: intrinsic stress; Si-doped SnO2; amorphous oxide semiconductors intrinsic stress; Si-doped SnO2; amorphous oxide semiconductors
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Ning, H.; Liu, X.; Zhang, H.; Fang, Z.; Cai, W.; Chen, J.; Yao, R.; Xu, M.; Wang, L.; Lan, L.; Peng, J.; Wang, X.; Zhang, Z. Effect of Intrinsic Stress on Structural and Optical Properties of Amorphous Si-Doped SnO2 Thin-Film. Materials 2017, 10, 24.

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