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Journal: Energies, 2019
Volume: 12
Number: 2310

Article: Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review
Authors: by Patrick Fiorenza, Filippo Giannazzo and Fabrizio Roccaforte
Link: https://www.mdpi.com/1996-1073/12/12/2310

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