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Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs
Key Laboratory of MEMS of Ministry of Education, Southeast University, 2 Sipailou, Nanjing, Jiangsu, People’s Republic of China
College of Electronic & Information Engineering, Nanjing University of Information Science & Technology, 219 Ning-Lu Road, Nanjing, Jiangsu, People’s Republic of China
* Authors to whom correspondence should be addressed.
Received: 22 March 2009; in revised form: 15 April 2009 / Accepted: 16 April 2009 / Published: 17 April 2009
Abstract: In order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET) pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that  is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the  orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress obviously alters the ballistic performance, while the uniaxial compressive stress slightly changes the ballistic hole current. Furthermore, the competition of injection velocity and carrier density related to the effective hole masses is found to play a critical role in determining the performance of the nanotransistors.
Keywords: NW FET pressure sensor; orientation; uniaxial stress; ballistic hole transport
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MDPI and ACS Style
Zhang, J.-H.; Huang, Q.-A.; Yu, H.; Lei, S.-Y. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs. Sensors 2009, 9, 2746-2759.
Zhang J-H, Huang Q-A, Yu H, Lei S-Y. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs. Sensors. 2009; 9(4):2746-2759.
Zhang, Jia-Hong; Huang, Qing-An; Yu, Hong; Lei, Shuang-Ying. 2009. "Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs." Sensors 9, no. 4: 2746-2759.