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Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs
AbstractIn order to design and optimize high-sensitivity silicon nanowire-field-effect transistor (SiNW FET) pressure sensors, this paper investigates the effects of channel orientations and the uniaxial stress on the ballistic hole transport properties of a strongly quantized SiNW FET placed near the high stress regions of the pressure sensors. A discrete stress-dependent six-band k.p method is used for subband structure calculation, coupled to a two-dimensional Poisson solver for electrostatics. A semi-classical ballistic FET model is then used to evaluate the ballistic current-voltage characteristics of SiNW FETs with and without strain. Our results presented here indicate that  is the optimum orientation for the p-type SiNW FETs and sensors. For the ultra-scaled 2.2 nm square SiNW, due to the limit of strong quantum confinement, the effect of the uniaxial stress on the magnitude of ballistic drive current is too small to be considered, except for the  orientation. However, for larger 5 nm square SiNW transistors with various transport orientations, the uniaxial tensile stress obviously alters the ballistic performance, while the uniaxial compressive stress slightly changes the ballistic hole current. Furthermore, the competition of injection velocity and carrier density related to the effective hole masses is found to play a critical role in determining the performance of the nanotransistors.
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MDPI and ACS Style
Zhang, J.-H.; Huang, Q.-A.; Yu, H.; Lei, S.-Y. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs. Sensors 2009, 9, 2746-2759.View more citation formats
Zhang J-H, Huang Q-A, Yu H, Lei S-Y. Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs. Sensors. 2009; 9(4):2746-2759.Chicago/Turabian Style
Zhang, Jia-Hong; Huang, Qing-An; Yu, Hong; Lei, Shuang-Ying. 2009. "Orientation Effects in Ballistic High-Strained P-type Si Nanowire FETs." Sensors 9, no. 4: 2746-2759.