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1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors
Institut des Nanotechnologies de Lyon (INL), CNRS UMR5270, Université Claude Bernard Lyon1, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France
STMicroelectronics, Front-End Technology and Manufacturing (FTM), 850 rue Jean Monnet, 38926 Crolles Cedex, France
* Author to whom correspondence should be addressed.
Received: 31 October 2008; in revised form: 9 December 2008 / Accepted: 30 December 2008 / Published: 7 January 2009
Abstract: We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.
Keywords: 1T pixel; CMOS image sensors (CIS); floating-gate MOSFET; modeling; rectangular-gate pixel; ring-gate pixel
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MDPI and ACS Style
Lu, G.-N.; Tournier, A.; Roy, F.; Deschamps, B. 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors. Sensors 2009, 9, 131-147.
Lu G-N, Tournier A, Roy F, Deschamps B. 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors. Sensors. 2009; 9(1):131-147.
Lu, Guo-Neng; Tournier, Arnaud; Roy, François; Deschamps, Benoît. 2009. "1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors." Sensors 9, no. 1: 131-147.