Next Article in Journal
Effect of Structural Design of Silver/Silver Chloride Electrodes on Stability and Response Time and the Implications for Improved Accuracy in pH Measurement
Next Article in Special Issue
CMOS Image Sensors for High Speed Applications
Previous Article in Journal
Preparation of Surface Adsorbed and Impregnated Multi-walled Carbon Nanotube/Nylon-6 Nanofiber Composites and Investigation of their Gas Sensing Ability
Previous Article in Special Issue
Sparse Detector Imaging Sensor with Two-Class Silhouette Classification
Sensors 2009, 9(1), 131-147; doi:10.3390/s90100131

1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors

1,* , 2
1 Institut des Nanotechnologies de Lyon (INL), CNRS UMR5270, Université Claude Bernard Lyon1, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France 2 STMicroelectronics, Front-End Technology and Manufacturing (FTM), 850 rue Jean Monnet, 38926 Crolles Cedex, France
* Author to whom correspondence should be addressed.
Received: 31 October 2008 / Revised: 9 December 2008 / Accepted: 30 December 2008 / Published: 7 January 2009
(This article belongs to the Special Issue Image Sensors)
View Full-Text   |   Download PDF [540 KB, uploaded 21 June 2014]   |   Browse Figures


We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.
Keywords: 1T pixel; CMOS image sensors (CIS); floating-gate MOSFET; modeling; rectangular-gate pixel; ring-gate pixel 1T pixel; CMOS image sensors (CIS); floating-gate MOSFET; modeling; rectangular-gate pixel; ring-gate pixel
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Share & Cite This Article

Further Mendeley | CiteULike
Export to BibTeX |
EndNote |
MDPI and ACS Style

Lu, G.-N.; Tournier, A.; Roy, F.; Deschamps, B. 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors. Sensors 2009, 9, 131-147.

View more citation formats

Related Articles

Article Metrics

For more information on the journal, click here


[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert