Sensors 2009, 9(1), 131-147; doi:10.3390/s90100131

1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors

1 Institut des Nanotechnologies de Lyon (INL), CNRS UMR5270, Université Claude Bernard Lyon1, 43 Bd du 11 Novembre 1918, 69622 Villeurbanne Cedex, France 2 STMicroelectronics, Front-End Technology and Manufacturing (FTM), 850 rue Jean Monnet, 38926 Crolles Cedex, France
* Author to whom correspondence should be addressed.
Received: 31 October 2008; in revised form: 9 December 2008 / Accepted: 30 December 2008 / Published: 7 January 2009
(This article belongs to the Special Issue Image Sensors)
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Abstract: We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.
Keywords: 1T pixel; CMOS image sensors (CIS); floating-gate MOSFET; modeling; rectangular-gate pixel; ring-gate pixel

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MDPI and ACS Style

Lu, G.-N.; Tournier, A.; Roy, F.; Deschamps, B. 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors. Sensors 2009, 9, 131-147.

AMA Style

Lu G-N, Tournier A, Roy F, Deschamps B. 1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors. Sensors. 2009; 9(1):131-147.

Chicago/Turabian Style

Lu, Guo-Neng; Tournier, Arnaud; Roy, François; Deschamps, Benoît. 2009. "1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors." Sensors 9, no. 1: 131-147.

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