Sensors 2008, 8(7), 4350-4364; doi:10.3390/s8074350
Article

The Image Transceiver Device: Studies of Improved Physical Design

1email and 1,2,* email
1 Department of Electrical Engineering, Holon Institute of Technology, Holon, Israel 2 Department of Electro-optical Engineering, Ben Gurion University, Beer-Sheva, Israel
* Author to whom correspondence should be addressed.
Received: 26 June 2008; in revised form: 17 July 2008 / Accepted: 21 July 2008 / Published: 25 July 2008
(This article belongs to the Special Issue Integrated High-performance Imagers)
PDF Full-text Download PDF Full-Text [170 KB, uploaded 16 September 2008 11:02 CEST]
Abstract: The Image Transceiver Device (ITD) design is based on combining LCOS micro-display, image processing tools and back illuminated APS imager in single CMOS chip [1]. The device is under development for Head-Mounted Display applications in augmented and virtual reality systems. The main issues with the present design are a high crosstalk of the backside imager and the need to shield the pixel circuitry from the photocharges generated in the silicon substrate. In this publication we present a modified, “deep p-well” ITD pixel design, which provides a significantly reduced crosstalk level, as well as an effective shielding of photo-charges for the pixel circuitry. The simulation performed using Silvaco software [ATLAS Silicon Device Simulator, Ray Trace and Light Absorption programs, Silvaco International, 1998] shows that the new approach provides high photo response and allows increasing the optimal thickness of the die over and above the 10-15 micrometers commonly used for back illuminated imaging devices, thereby improving its mechanical ruggedness following the thinning process and also providing a more efficient absorption of the long wavelength photons. The proposed deep p-well pixel structure is also a technology solution for the fabrication of high performance back illuminated CMOS image sensors.
Keywords: head-mounted display; CMOS imager; back illuminated APS; crosstalk; photoactivation; Smart-Goggle.

Article Statistics

Load and display the download statistics.

Citations to this Article

Cite This Article

MDPI and ACS Style

David, Y.; Efron, U. The Image Transceiver Device: Studies of Improved Physical Design. Sensors 2008, 8, 4350-4364.

AMA Style

David Y, Efron U. The Image Transceiver Device: Studies of Improved Physical Design. Sensors. 2008; 8(7):4350-4364.

Chicago/Turabian Style

David, Yitzhak; Efron, Uzi. 2008. "The Image Transceiver Device: Studies of Improved Physical Design." Sensors 8, no. 7: 4350-4364.

Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert