Sensors 2008, 8(7), 4350-4364; doi:10.3390/s8074350

The Image Transceiver Device: Studies of Improved Physical Design

1email and 1,2,* email
Received: 26 June 2008; in revised form: 17 July 2008 / Accepted: 21 July 2008 / Published: 25 July 2008
(This article belongs to the Special Issue Integrated High-performance Imagers)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: The Image Transceiver Device (ITD) design is based on combining LCOS micro-display, image processing tools and back illuminated APS imager in single CMOS chip [1]. The device is under development for Head-Mounted Display applications in augmented and virtual reality systems. The main issues with the present design are a high crosstalk of the backside imager and the need to shield the pixel circuitry from the photocharges generated in the silicon substrate. In this publication we present a modified, “deep p-well” ITD pixel design, which provides a significantly reduced crosstalk level, as well as an effective shielding of photo-charges for the pixel circuitry. The simulation performed using Silvaco software [ATLAS Silicon Device Simulator, Ray Trace and Light Absorption programs, Silvaco International, 1998] shows that the new approach provides high photo response and allows increasing the optimal thickness of the die over and above the 10-15 micrometers commonly used for back illuminated imaging devices, thereby improving its mechanical ruggedness following the thinning process and also providing a more efficient absorption of the long wavelength photons. The proposed deep p-well pixel structure is also a technology solution for the fabrication of high performance back illuminated CMOS image sensors.
Keywords: head-mounted display; CMOS imager; back illuminated APS; crosstalk; photoactivation; Smart-Goggle.
PDF Full-text Download PDF Full-Text [170 KB, uploaded 21 June 2014 01:57 CEST]

Export to BibTeX |

MDPI and ACS Style

David, Y.; Efron, U. The Image Transceiver Device: Studies of Improved Physical Design. Sensors 2008, 8, 4350-4364.

AMA Style

David Y, Efron U. The Image Transceiver Device: Studies of Improved Physical Design. Sensors. 2008; 8(7):4350-4364.

Chicago/Turabian Style

David, Yitzhak; Efron, Uzi. 2008. "The Image Transceiver Device: Studies of Improved Physical Design." Sensors 8, no. 7: 4350-4364.

Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert