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CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials
Department of Electronic Engineering, Kyungnam University, Masan, Kyungnam 631-701, Korea
Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106, USA
Intel Corporation, Hillsboro, OR 97124, USA
* Author to whom correspondence should be addressed.
Received: 12 February 2008; Accepted: 10 April 2008 / Published: 14 April 2008
Abstract: An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CNx film on Si3N4/Si substrate, plasma etching is performed to the gate area as well as trenches. CNx film is deposited by reactive RF magnetron sputtering method and patterned by the lift-off technique. The drain current is proportional to the dielectric constant, and the sensitivity is 2.8 ㎂/%RH.
Keywords: Integrated sensors; Humidity; CMOS; Carbon nitride film
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Cite This Article
MDPI and ACS Style
Lee, S.P.; Lee, J.G.; Chowdhury, S. CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials. Sensors 2008, 8, 2662-2672.
Lee SP, Lee JG, Chowdhury S. CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials. Sensors. 2008; 8(4):2662-2672.
Lee, Sung P.; Lee, Ji G.; Chowdhury, Shaestagir. 2008. "CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials." Sensors 8, no. 4: 2662-2672.