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Mesoporous Silicon with Modified Surface for Plant Viruses and Their Protein Particle Sensing
Research Institute of Electrical and Computer Engineering, HIT Hanyang University, 17 Haengdang-dong, Seongdong-ku, 133-791, Seoul, Korea
School of Computer and Communication Engineering, Daegu University, 15 Naeri, Jinryang, Geyeongsan, Gyeongbuk 712714, Daegu, Korea
* Author to whom correspondence should be addressed.
Received: 1 April 2008; in revised form: 1 September 2008 / Accepted: 1 September 2008 / Published: 1 October 2008
Abstract: Changes in electric parameters of a mesoporous silicon treated by a plasma chemical etching with fluorine and hydrogen ions, under the adsorption of NEPO (Nematodetransmitted Polyhedral) plant viruses such as TORSV (Tomato Ringspot Virus), GFLV (Grapevine Fan Leaf Virus) and protein macromolecule from TORSV particles are described. The current response to the applied voltage is measured for each virus particle to investigate the material parameters which are sensitive to the adsorbed particles. The peculiar behaviors of the response are modeled by the current-voltage relationship in a MOSFET. This model explains the behavior well and the double gate model of the MOSFET informs that the mesoporous silicon is a highly sensitive means of detecting the viruses in the size range less than 50 nm.
Keywords: Biosensors; Porous Silicon; Plant Viruses; MOSFET; Double Gate; currentvoltage; response
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Cite This Article
MDPI and ACS Style
Vashpanov, Y.; Young Son, J.; Dal Kwack, K. Mesoporous Silicon with Modified Surface for Plant Viruses and Their Protein Particle Sensing. Sensors 2008, 8, 6225-6234.
Vashpanov Y, Young Son J, Dal Kwack K. Mesoporous Silicon with Modified Surface for Plant Viruses and Their Protein Particle Sensing. Sensors. 2008; 8(10):6225-6234.
Vashpanov, Yuriy; Young Son, Jung; Dal Kwack, Kae. 2008. "Mesoporous Silicon with Modified Surface for Plant Viruses and Their Protein Particle Sensing." Sensors 8, no. 10: 6225-6234.