Sensors 2008, 8(1), 185-192; doi:10.3390/s8010185
Article

Fabrication of a ZnO Pyroelectric Sensor

Chun-Ching Hsiao 1 email, Kuo-Yi Huang 2 email and Yuh-Chung Hu 2,* email
1 Nano-Electro-Mechanical Systems Research Center, National Taiwan University, Taipei, Taiwan 2 Advanced Manufacturing Research Center, Department of Mechatronic Engineering, Huafan University, Taipei, Taiwan
* Author to whom correspondence should be addressed.
Received: 20 November 2007 / Accepted: 2 January 2008 / Published: 21 January 2008
PDF Full-text Download PDF Full-Text [287 KB, uploaded 16 September 2008 11:01 CEST]
Abstract: This paper proposes a two-step radio frequency (RF) sputtering process to forma ZnO film for pyroelectric sensors. It is shown that the two-step sputtering process with alower power step followed by a higher power step can significantly improve the voltageresponsivity of the ZnO pyroelectric sensor. The improvement is attributed mainly to theformation of ZnO film with a strongly preferred orientation towards the c-axis.Furthermore, a nickel film deposited onto the uncovered parts of the ZnO film caneffectively improve the voltage responsivity at higher modulating frequencies since thenickel film can enhance the incident energy absorption of the ZnO layer.
Keywords: pyroelectric sensor; thin film deposition; ZnO

Article Statistics

Click here to load and display the download statistics.

Cite This Article

MDPI and ACS Style

Hsiao, C.-C.; Huang, K.-Y.; Hu, Y.-C. Fabrication of a ZnO Pyroelectric Sensor. Sensors 2008, 8, 185-192.

AMA Style

Hsiao C-C, Huang K-Y, Hu Y-C. Fabrication of a ZnO Pyroelectric Sensor. Sensors. 2008; 8(1):185-192.

Chicago/Turabian Style

Hsiao, Chun-Ching; Huang, Kuo-Yi; Hu, Yuh-Chung. 2008. "Fabrication of a ZnO Pyroelectric Sensor." Sensors 8, no. 1: 185-192.

Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert