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Sensors 2008, 8(1), 185-192; doi:10.3390/s8010185

Fabrication of a ZnO Pyroelectric Sensor

1 Nano-Electro-Mechanical Systems Research Center, National Taiwan University, Taipei, Taiwan 2 Advanced Manufacturing Research Center, Department of Mechatronic Engineering, Huafan University, Taipei, Taiwan
* Author to whom correspondence should be addressed.
Received: 20 November 2007 / Accepted: 2 January 2008 / Published: 21 January 2008
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This paper proposes a two-step radio frequency (RF) sputtering process to forma ZnO film for pyroelectric sensors. It is shown that the two-step sputtering process with alower power step followed by a higher power step can significantly improve the voltageresponsivity of the ZnO pyroelectric sensor. The improvement is attributed mainly to theformation of ZnO film with a strongly preferred orientation towards the c-axis.Furthermore, a nickel film deposited onto the uncovered parts of the ZnO film caneffectively improve the voltage responsivity at higher modulating frequencies since thenickel film can enhance the incident energy absorption of the ZnO layer.
Keywords: pyroelectric sensor; thin film deposition; ZnO pyroelectric sensor; thin film deposition; ZnO
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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Hsiao, C.-C.; Huang, K.-Y.; Hu, Y.-C. Fabrication of a ZnO Pyroelectric Sensor. Sensors 2008, 8, 185-192.

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