Sensors 2008, 8(1), 185-192; doi:10.3390/s8010185
Article

Fabrication of a ZnO Pyroelectric Sensor

1email, 2email and 2,* email
Received: 20 November 2007; Accepted: 2 January 2008 / Published: 21 January 2008
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: This paper proposes a two-step radio frequency (RF) sputtering process to forma ZnO film for pyroelectric sensors. It is shown that the two-step sputtering process with alower power step followed by a higher power step can significantly improve the voltageresponsivity of the ZnO pyroelectric sensor. The improvement is attributed mainly to theformation of ZnO film with a strongly preferred orientation towards the c-axis.Furthermore, a nickel film deposited onto the uncovered parts of the ZnO film caneffectively improve the voltage responsivity at higher modulating frequencies since thenickel film can enhance the incident energy absorption of the ZnO layer.
Keywords: pyroelectric sensor; thin film deposition; ZnO
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MDPI and ACS Style

Hsiao, C.-C.; Huang, K.-Y.; Hu, Y.-C. Fabrication of a ZnO Pyroelectric Sensor. Sensors 2008, 8, 185-192.

AMA Style

Hsiao C-C, Huang K-Y, Hu Y-C. Fabrication of a ZnO Pyroelectric Sensor. Sensors. 2008; 8(1):185-192.

Chicago/Turabian Style

Hsiao, Chun-Ching; Huang, Kuo-Yi; Hu, Yuh-Chung. 2008. "Fabrication of a ZnO Pyroelectric Sensor." Sensors 8, no. 1: 185-192.

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