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Micro Semiconductor CO Sensors Based on Indium-Doped Tin Dioxide Nanocrystalline Powders
Department of Electronics Engineering, Chungnam National University, Daejeon, South Korea
Optic and Electric Materials Center, Korea Institute of Energy Research, Daejeon, South Korea
* Authors to whom correspondence should be addressed.
Received: 10 March 2006; Accepted: 10 May 2006 / Published: 10 May 2006
(This article belongs to the Special Issue Gas Sensors
Abstract: The precursors of SnO2 or In2O3/SnO2 nanocrystlline powders have been prepared bythe sol-precipitation method. The precursors were calcined at different temperatures to prepareSnO2 or In2O3/SnO2 nanocrystalline powders with different particle sizes. The nanocrystalliteswere examined by differential thermal analysis (DTA), X-ray diffraction (XRD) andtransmission electron microscopy (TEM). And then thick film CO sensors were fabricated usingprepared SnO2 or In2O3/SnO2 nanocrystlline powders loaded with PdOx. The composition thatgave the highest sensitivity for CO was in the weight% ratio of 5 wt.% In2O3/SnO2:PdOx as99:1(wt %). The composite material was found sensitive against CO at the working temperature200 °C. It was found that the sensors based on In2O3/SnO2 nanocrystalline system exhibitedvery short response time to CO at ppm level. These characteristics make the sensor to be apromising candidate for detecting low concentrations of CO.
Keywords: Micro CO gas sensor; indium oxide; nanocrystalline powders; tin dioxide.
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MDPI and ACS Style
Kim, I.J.; Han, S.D.; Han, C.H.; Gwak, J.; Lee, H.D.; Wang, J.S. Micro Semiconductor CO Sensors Based on Indium-Doped Tin Dioxide Nanocrystalline Powders. Sensors 2006, 6, 526-535.
Kim IJ, Han SD, Han CH, Gwak J, Lee HD, Wang JS. Micro Semiconductor CO Sensors Based on Indium-Doped Tin Dioxide Nanocrystalline Powders. Sensors. 2006; 6(5):526-535.
Kim, Il J.; Han, Sang D.; Han, Chi H.; Gwak, Jihye; Lee, Hi D.; Wang, Jin S. 2006. "Micro Semiconductor CO Sensors Based on Indium-Doped Tin Dioxide Nanocrystalline Powders." Sensors 6, no. 5: 526-535.