Sensors 2004, 4(10), 163-169; doi:10.3390/s41000163

Fabrication of Thin-Film LAPS with Amorphous Silicon

1,* email, 2,3, 4, 5 and 1
Received: 9 August 2004; Accepted: 27 August 2004 / Published: 30 October 2004
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Abstract: To improve the spatial resolution of the light-addressable potentiometric sensor (LAPS), it is necessary to reduce the thickness of the semiconductor layer, which, however, causes a problem of the mechanical strength of the sensor plate. In this study, a thin-film LAPS was fabricated with amorphous silicon (a-Si) deposited on a transparent glass substrate. The current-voltage characteristics and pH sensitivity of the fabricated a-Si LAPS were investigated.
Keywords: LAPS; chemical imaging sensor; amorphous silicon; pH sensor
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MDPI and ACS Style

Yoshinobu, T.; Schöning, M.J.; Finger, F.; Moritz, W.; Iwasaki, H. Fabrication of Thin-Film LAPS with Amorphous Silicon. Sensors 2004, 4, 163-169.

AMA Style

Yoshinobu T, Schöning MJ, Finger F, Moritz W, Iwasaki H. Fabrication of Thin-Film LAPS with Amorphous Silicon. Sensors. 2004; 4(10):163-169.

Chicago/Turabian Style

Yoshinobu, Tatsuo; Schöning, Michael J.; Finger, Friedhelm; Moritz, Werner; Iwasaki, Hiroshi. 2004. "Fabrication of Thin-Film LAPS with Amorphous Silicon." Sensors 4, no. 10: 163-169.

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