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Fabrication of Thin-Film LAPS with Amorphous Silicon
ISIR, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
University of Applied Sciences, Aachen (Division Jülich), Laboratory for Chemical Sensors and Biosensors, Ginsterweg 1, D-52428, Jülich, Germany
ISG-2, Research Centre Jülich, 52425 Jülich, Germany
IPV, Research Centre Jülich, 52425 Jülich, Germany
Humboldt University Berlin, Brook-Taylor-Str. 2, 12489 Berlin, Germany
* Author to whom correspondence should be addressed.
Received: 9 August 2004 / Accepted: 27 August 2004 / Published: 30 October 2004
Abstract: To improve the spatial resolution of the light-addressable potentiometric sensor (LAPS), it is necessary to reduce the thickness of the semiconductor layer, which, however, causes a problem of the mechanical strength of the sensor plate. In this study, a thin-film LAPS was fabricated with amorphous silicon (a-Si) deposited on a transparent glass substrate. The current-voltage characteristics and pH sensitivity of the fabricated a-Si LAPS were investigated.
Keywords: LAPS; chemical imaging sensor; amorphous silicon; pH sensor
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MDPI and ACS Style
Yoshinobu, T.; Schöning, M.J.; Finger, F.; Moritz, W.; Iwasaki, H. Fabrication of Thin-Film LAPS with Amorphous Silicon. Sensors 2004, 4, 163-169.
Yoshinobu T, Schöning MJ, Finger F, Moritz W, Iwasaki H. Fabrication of Thin-Film LAPS with Amorphous Silicon. Sensors. 2004; 4(10):163-169.
Yoshinobu, Tatsuo; Schöning, Michael J.; Finger, Friedhelm; Moritz, Werner; Iwasaki, Hiroshi. 2004. "Fabrication of Thin-Film LAPS with Amorphous Silicon." Sensors 4, no. 10: 163-169.