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Sensors 2004, 4(10), 163-169; doi:10.3390/s41000163

Fabrication of Thin-Film LAPS with Amorphous Silicon

1,* , 2,3, 4, 5 and 1
Received: 9 August 2004 / Accepted: 27 August 2004 / Published: 30 October 2004
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Abstract: To improve the spatial resolution of the light-addressable potentiometric sensor (LAPS), it is necessary to reduce the thickness of the semiconductor layer, which, however, causes a problem of the mechanical strength of the sensor plate. In this study, a thin-film LAPS was fabricated with amorphous silicon (a-Si) deposited on a transparent glass substrate. The current-voltage characteristics and pH sensitivity of the fabricated a-Si LAPS were investigated.
Keywords: LAPS; chemical imaging sensor; amorphous silicon; pH sensor LAPS; chemical imaging sensor; amorphous silicon; pH sensor
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Yoshinobu, T.; Schöning, M.J.; Finger, F.; Moritz, W.; Iwasaki, H. Fabrication of Thin-Film LAPS with Amorphous Silicon. Sensors 2004, 4, 163-169.

AMA Style

Yoshinobu T, Schöning MJ, Finger F, Moritz W, Iwasaki H. Fabrication of Thin-Film LAPS with Amorphous Silicon. Sensors. 2004; 4(10):163-169.

Chicago/Turabian Style

Yoshinobu, Tatsuo; Schöning, Michael J.; Finger, Friedhelm; Moritz, Werner; Iwasaki, Hiroshi. 2004. "Fabrication of Thin-Film LAPS with Amorphous Silicon." Sensors 4, no. 10: 163-169.

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