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• Dawgul, M
• Pijanowska, DG.
• Krzyskow, A
• Kruk, J
• Torbicz, W
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• Dawgul, M
• Pijanowska, DG.
• Krzyskow, A
• Kruk, J
• Torbicz, W
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• Dawgul, M
• Pijanowska, DG.
• Krzyskow, A
• Kruk, J
• Torbicz, W

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Sensors 2003, 3(6), 146-159; doi:10.3390/s30600146

Article

An influence of polyHEMA gate layer on properties of ChemFETs

Marek Dawgul*, Dorota G. Pijanowska, Alfred Krzyskow, Jerzy Kruk and Wladyslaw Torbicz

Institute of Biocybernetics and Biomedical Engineering of the Polish Academy of Sciences, ul. Ks. Trojdena 4, 02-109 Warsaw, Poland

* Author to whom correspondence should be addressed.

Received: 16 April 2003 / Accepted: 3 June 2003 / Published: 28 June 2003

Download PDF Full-Text [382 KB, uploaded 1 October 2008 09:01 CEST]

Abstract: A complex deposition procedure of the hydrogel layer of modified poly(2-hydroxyethyl methacrylate) (polyHEMA) covalently linked to the silicon nitride surface and covering only the gate area of the ISFET, was optimized for photolithographic technology, using standard silicon wafers of 3” diameter. The influence of hydrogel composition and layer thickness on the sensors’ parameters was investigated. It was shown, that ISFETs covered with more than 100 μm thick polyHEMA layers in restricted pH-range could be practically insensitive to pH. Regarding mechanical stability of ion-selective sensors, a polyHEMA layer of ca. 20 μm thickness was found to be the best suitable for further manufacturing of durable ion selective sensors (Chemically modified Field-Effect Transistors – ChemFETs). The weak buffering properties of the thin polyHEMA layers had no disadvantageous influence on the sensors’ function.

Keywords: Ion-sensitive field-effect transistor(ISFET); Poly(2-hydroxyethyl methacrylate); hydrogel buffering layer; Photolithography

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