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Sensors 2002, 2(8), 347-355; doi:10.3390/s20800347

Article

Gamma Radiation Dosimetry Using Tellurium Dioxide Thin Film Structures

Khalil Arshak*  and Olga Korostynska

Electronic & Computer Engineering Dept., University of Limerick, Limerick, Ireland

* Author to whom correspondence should be addressed.

Received: 3 July 2002 / Accepted: 19 July 2002 / Published: 23 August 2002

Download PDF Full-Text [92 KB, uploaded 1 October 2008 09:01 CEST]

Abstract: Thin films of Tellurium dioxide (TeO2) were investigated for γ-radiation dosimetry purposes. Samples were fabricated using thin film vapour deposition technique. Thin films of TeO2 were exposed to a 60Co γ-radiation source at a dose rate of 6 Gy/min at room temperature. Absorption spectra for TeO2 films were recorded and the values of the optical band gap and energies of the localized states for as-deposited and γ-irradiated samples were calculated. It was found that the optical band gap values were decreased as the radiation dose was increased. Samples with electrical contacts having a planar structure showed a linear increase in current values with the increase in radiation dose up to a certain dose level. The observed changes in both the optical and the electrical properties suggest that TeO2 thin film may be considered as an effective material for room temperature real time γ-radiation dosimetry.

Keywords: Gamma Radiation; Dosimetry; Thin Films; Tellurium Dioxide; Optical Band Gap

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