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Sensors 2002, 2(6), 205-218; doi:10.3390/s20600205

Thin films of In2O3/SiO for Humidity Sensing Applications

Microelectronics and Semiconductor Research Group, ECE Department, National Technological Park, University of Limerick, Limerick, Ireland
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Received: 10 May 2002 / Accepted: 20 May 2002 / Published: 21 June 2002
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Abstract

This paper documents the manufacture and testing of a humidity sensor based on a combination of In2O3/SiO. A number of different sensor samples have been produced by thermal deposition and the effect of varying the vacuum pressure has also been investigated. The AC and DC conduction mechanisms have been investigated. From the AC conduction studies, the tunneling conduction mechanism has been observed at low frequencies and the hopping conduction mechanism, for the majority of sensor samples, has been observed at high frequencies. The DC conduction mechanisms have indicated the possibility of spacecharge-limited conduction. The sensor with the highest humidity sensitivity of 1.145%/RH% is 85%In2O3/15%SiO, which is produced at a vacuum pressure of 2×10-4 mbar.From the point of view of temperature stability, the 55%In2O3/45%SiO samples produced at a vacuum pressure of 2×10-4 mbar exhibit the lowest temperature sensitivity, 0.3%/oC. View Full-Text
Keywords: Thin film sensor; AC conduction; DC conduction; Humidity sensitivity; Temperature sensitivity Thin film sensor; AC conduction; DC conduction; Humidity sensitivity; Temperature sensitivity
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MDPI and ACS Style

Arshak, K.; Twomey, K. Thin films of In2O3/SiO for Humidity Sensing Applications. Sensors 2002, 2, 205-218.

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