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Sensors 2018, 18(8), 2603; https://doi.org/10.3390/s18082603

Measurement and Isolation of Thermal Stress in Silicon-On-Glass MEMS Structures

Department of Precision Instruments, Tsinghua University, Beijing 100084, China
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Received: 8 June 2018 / Revised: 1 August 2018 / Accepted: 3 August 2018 / Published: 8 August 2018
(This article belongs to the Section Physical Sensors)
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Abstract

The mechanical stress in silicon-on-glass MEMS structures and a stress isolation scheme were studied by analysis and experimentation. Double-ended tuning forks (DETFs) were used to measure the stress based on the stress-frequency conversion effect. Considering the coefficients of thermal expansion (CTEs) of silicon and glass and the temperature coefficient of the Young’s modulus of silicon, the sensitivity of the natural frequency to temperature change was analyzed. A stress isolation mechanism composed of annular isolators and a rigid frame is proposed to prevent the structure inside the frame from being subjected to thermal stresses. DETFs without and with one- or two-stage isolation frames with the orientations <110> and <100> were designed, the stress and natural frequency variations with temperature were simulated and measured. The experimental results show that in the temperature range of −50 °C to 85 °C, the stress varied from −18 MPa to 10 MPa in the orientation <110> and −11 MPa to 5 MPa in the orientation <100>. For the 1-stage isolated DETF of <110> orientation, the measured stress variation was only 0.082 MPa. The thermal stress can be mostly rejected by a stress isolation structure, which is applicable in the design of stress-sensitive MEMS sensors and actuators. View Full-Text
Keywords: microelectromechanical system (MEMS); silicon-on-glass; thermal stress; stress measurement; stress isolation microelectromechanical system (MEMS); silicon-on-glass; thermal stress; stress measurement; stress isolation
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Chen, Z.; Guo, M.; Zhang, R.; Zhou, B.; Wei, Q. Measurement and Isolation of Thermal Stress in Silicon-On-Glass MEMS Structures. Sensors 2018, 18, 2603.

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