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Sensors 2018, 18(5), 1542; https://doi.org/10.3390/s18051542

Frequency Invariability of (Pb,La)(Zr,Ti)O3 Antiferroelectric Thick-Film Micro-Cantilevers

1
School of Electrical and Control Engineering, North University of China, Taiyuan 030051, China
2
Advanced Manufacturing Technology of Provincial Key Laboratory, North University of China, Taiyuan 030051, China
*
Author to whom correspondence should be addressed.
Received: 8 April 2018 / Revised: 8 May 2018 / Accepted: 9 May 2018 / Published: 13 May 2018
(This article belongs to the Section Physical Sensors)
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Abstract

Micro-electromechanical systems comprising antiferroelectric layers can offer both actuation and transduction to integrated technologies. Micro-cantilevers based on the (Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric thick film are fabricated by the micro-nano manufacturing process, to utilize the effect of phase transition induced strain and sharp phase switch of antiferroelectric materials. When micro-cantilevers made of antiferroelectric thick films were driven by sweep voltages, there were two resonant peaks corresponding to the natural frequency shift from 27.8 to 27.0 kHz, before and after phase transition. This is the compensation principle for the PLZT micro-cantilever to tune the natural frequency by the amplitude modulation of driving voltage, rather than of frequency modulation. Considering the natural frequency shift about 0.8 kHz and the frequency tuning ability about 156 Hz/V before the phase transition, this can compensate the frequency shift caused by increasing temperature by tuning only the amplitude of driving voltage, when the ultrasonic micro-transducer made of antiferroelectric thick films works for such a long period. Therefore, antiferroelectric thick films with hetero-structures incorporated into PLZT micro-cantilevers not only require a lower driving voltage (no more than 40 V) than rival bulk piezoelectric ceramics, but also exhibit better performance of frequency invariability, based on the amplitude modulation. View Full-Text
Keywords: antiferroelectric thick films; frequency shift; micro-cantilevers antiferroelectric thick films; frequency shift; micro-cantilevers
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An, K.; Jin, X.; Meng, J.; Li, X.; Ren, Y. Frequency Invariability of (Pb,La)(Zr,Ti)O3 Antiferroelectric Thick-Film Micro-Cantilevers. Sensors 2018, 18, 1542.

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