Coupling p+n Field-Effect Transistor Circuits for Low Concentration Methane Gas Detection
AbstractNowadays, the detection of low concentration combustible methane gas has attracted great concern. In this paper, a coupling p+n field effect transistor (FET) amplification circuit is designed to detect methane gas. By optimizing the load resistance (RL), the response to methane of the commercial MP-4 sensor can be magnified ~15 times using this coupling circuit. At the same time, it decreases the limit of detection (LOD) from several hundred ppm to ~10 ppm methane, with the apparent response of 7.0 ± 0.2 and voltage signal of 1.1 ± 0.1 V. This is promising for the detection of trace concentrations of methane gas to avoid an accidental explosion because its lower explosion limit (LEL) is ~5%. The mechanism of this coupling circuit is that the n-type FET firstly generates an output voltage (VOUT) amplification process caused by the gate voltage-induced resistance change of the FET. Then, the p-type FET continues to amplify the signal based on the previous VOUT amplification process. View Full-Text
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Zhou, X.; Yang, L.; Bian, Y.; Ma, X.; Han, N.; Chen, Y. Coupling p+n Field-Effect Transistor Circuits for Low Concentration Methane Gas Detection. Sensors 2018, 18, 787.
Zhou X, Yang L, Bian Y, Ma X, Han N, Chen Y. Coupling p+n Field-Effect Transistor Circuits for Low Concentration Methane Gas Detection. Sensors. 2018; 18(3):787.Chicago/Turabian Style
Zhou, Xinyuan; Yang, Liping; Bian, Yuzhi; Ma, Xiang; Han, Ning; Chen, Yunfa. 2018. "Coupling p+n Field-Effect Transistor Circuits for Low Concentration Methane Gas Detection." Sensors 18, no. 3: 787.
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