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Sensors 2017, 17(10), 2204; doi:10.3390/s17102204

Application of CMOS Technology to Silicon Photomultiplier Sensors

†,* ,
and
†,*
School of life science and technology, Huazhong University of Science and Technology, Wuhan 430073, China
These authors contributed equally to this work.
*
Authors to whom correspondence should be addressed.
Received: 7 September 2017 / Revised: 20 September 2017 / Accepted: 21 September 2017 / Published: 25 September 2017
(This article belongs to the Special Issue Silicon Technologies for Photonic Sensors)
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Abstract

We use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. View Full-Text
Keywords: silicon photomultiplier; avalanche detection structures; geiger mode; low photon flux sensors silicon photomultiplier; avalanche detection structures; geiger mode; low photon flux sensors
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D’Ascenzo, N.; Zhang, X.; Xie, Q. Application of CMOS Technology to Silicon Photomultiplier Sensors. Sensors 2017, 17, 2204.

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