Application of CMOS Technology to Silicon Photomultiplier Sensors
AbstractWe use the 180 nm GLOBALFOUNDRIES (GF) BCDLite CMOS process for the production of a silicon photomultiplier prototype. We study the main characteristics of the developed sensor in comparison with commercial SiPMs obtained in custom technologies and other SiPMs developed with CMOS-compatible processes. We support our discussion with a transient modeling of the detection process of the silicon photomultiplier as well as with a series of static and dynamic experimental measurements in dark and illuminated environments. View Full-Text
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D’Ascenzo, N.; Zhang, X.; Xie, Q. Application of CMOS Technology to Silicon Photomultiplier Sensors. Sensors 2017, 17, 2204.
D’Ascenzo N, Zhang X, Xie Q. Application of CMOS Technology to Silicon Photomultiplier Sensors. Sensors. 2017; 17(10):2204.Chicago/Turabian Style
D’Ascenzo, Nicola; Zhang, Xi; Xie, Qingguo. 2017. "Application of CMOS Technology to Silicon Photomultiplier Sensors." Sensors 17, no. 10: 2204.
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