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Sensors 2016, 16(7), 1030; doi:10.3390/s16071030

Exchange Bias Tuning for Magnetoresistive Sensors by Inclusion of Non-Magnetic Impurities

Dipartimento di Fisica, Politecnico di Milano, via Giuseppe Colombo, 81, 20133 Milano, Italy
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Academic Editor: Vittorio M. N. Passaro
Received: 20 April 2016 / Revised: 20 June 2016 / Accepted: 28 June 2016 / Published: 4 July 2016
(This article belongs to the Special Issue Magnetoresistive Sensors under Extreme Conditions)
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Abstract

The fine control of the exchange coupling strength and blocking temperature ofexchange bias systems is an important requirement for the development of magnetoresistive sensors with two pinned electrodes. In this paper, we successfully tune these parameters in top- and bottom-pinned systems, comprising 5 nm thick Co40Fe40B20 and 6.5 nm thick Ir22Mn78 films. By inserting Ru impurities at different concentrations in the Ir22Mn78 layer, blocking temperatures ranging from 220 °C to 100 °C and exchange bias fields from 200 Oe to 60 Oe are obtained. This method is then applied to the fabrication of sensors based on magnetic tunneling junctions consisting of a pinned synthetic antiferromagnet reference layer and a top-pinned sensing layer. This work paves the way towards the development of new sensors with finely tuned magnetic anisotropies. View Full-Text
Keywords: magnetic tunneling junction; magnetoresistive sensors; exchange bias; IrMn; blocking temperature; field cooling magnetic tunneling junction; magnetoresistive sensors; exchange bias; IrMn; blocking temperature; field cooling
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Sharma, P.P.; Albisetti, E.; Monticelli, M.; Bertacco, R.; Petti, D. Exchange Bias Tuning for Magnetoresistive Sensors by Inclusion of Non-Magnetic Impurities. Sensors 2016, 16, 1030.

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