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Sensors 2016, 16(6), 921; doi:10.3390/s16060921

A 3D Model of the Thermoelectric Microwave Power Sensor by MEMS Technology

Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China
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Author to whom correspondence should be addressed.
Academic Editors: Ferran Martín and Jordi Naqui
Received: 25 March 2016 / Revised: 7 June 2016 / Accepted: 16 June 2016 / Published: 21 June 2016
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Abstract

In this paper, a novel 3D model is proposed to describe the temperature distribution of the thermoelectric microwave power sensor. In this 3D model, the heat flux density decreases from the upper surface to the lower surface of the GaAs substrate while it was supposed to be a constant in the 2D model. The power sensor is fabricated by a GaAs monolithic microwave integrated circuit (MMIC) process and micro-electro-mechanical system (MEMS) technology. The microwave performance experiment shows that the S11 is less than −26 dB over the frequency band of 1–10 GHz. The power response experiment demonstrates that the output voltage increases from 0 mV to 27 mV, while the incident power varies from 1 mW to 100 mW. The measured sensitivity is about 0.27 mV/mW, and the calculated result from the 3D model is 0.28 mV/mW. The relative error has been reduced from 7.5% of the 2D model to 3.7% of the 3D model. View Full-Text
Keywords: 3D model; power sensor; thermoelectric; GaAs MMIC; micro-electro-mechanical system (MEMS) technology 3D model; power sensor; thermoelectric; GaAs MMIC; micro-electro-mechanical system (MEMS) technology
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Yi, Z.; Liao, X. A 3D Model of the Thermoelectric Microwave Power Sensor by MEMS Technology. Sensors 2016, 16, 921.

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